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MJ802-BP

Description
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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MJ802-BP Overview

Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

MJ802-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-204AA
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)30 A
Collector-emitter maximum voltage90 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee3
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
Base Number Matches1
MCC
Features
With TO-3 package
Complement to PNP MJ4502
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
MJ802
NPN High Power
Silicon Transistor
TO-3
Rating
90
100
4.0
30
200
200
-65 to +200
O
Maximum Ratings
Symbol
V
CEO
V
CB
V
EB
I
C
P
D
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Unit
V
V
V
A
W
E
A
N
C
K
D
U
V
Min
90
---
---
Max
---
1.0
5.0
Units
Vdc
mAdc
mAdc
PIN 1.
PIN 2.
CASE.
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter
sustaining
Voltage*
(I
C
=200mAdc, I
B
=0)
Collector-Base Cutoff Current
(V
CB
=100Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
Forward Current Transfer ratio*
(I
C
=7.5Adc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=7.5Adc, I
B
=0.75Adc)
Base-Emitter Saturation Voltage
(I
C
=7.5Adc, I
B
=0.75Adc)
L
2
1
Q
BASE
EMITTER
COLLECTOR
H
G
B
OFF CHARACTERISTICS
V
CEO(SUS)
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
25
100
0.8
1.3
Vdc
Vdc
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550
REF
-----
1.050
.250
.335
.038
.043
0.55
0.70
.430
BSC
.215
BSC
.440
.480
.665
BSC
-----
.830
.151
.165
1.187
BSC
.131
.188
DIMENSIONS
MM
MIN
39.37
-----
6.35
0.97
1.40
10.92
5.46
11.18
16.89
-----
3.84
30.15
3.33
MAX
REF
26.67
8.51
1.09
1.77
BSC
BSC
12.19
BSC
21.08
4.19
BSC
4.77
NOTE
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(V
CE
=10Vdc, I
B
=1.0Adc, f=1.0MHz)
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
f
T
2.0
MHz
www.mccsemi.com
Revision: 1
2003/04/21

MJ802-BP Related Products

MJ802-BP MJ802
Description Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified? conform to incompatible
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Parts packaging code TO-204AA TO-204AA
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 30 A 30 A
Collector-emitter maximum voltage 90 V 90 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN TIN LEAD
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 2 MHz 2 MHz
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