T-IXFD75N10 datasheet, PDF - EEWORLD Datasheet

T-IXFD75N10: DescriptionPower Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size128KB，1 Pages; ManufacturerIXYS

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T-IXFD75N10 Overview

Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	IXYS
package instruction	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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