SD600N/R Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 600 A
FEATURES
•
•
•
•
•
•
•
•
•
Wide current range
High voltage ratings up to 3200 V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
Compression bonded encapsulations
RoHS complaint
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
B-8
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
600 A
•
•
•
•
•
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SD600N/R
04 to 20
600
T
C
92
940
50 Hz
60 Hz
50 Hz
60 Hz
Range
13 000
13 600
845
772
400 to 2000
- 40 to 180
10 500
11 000
551
503
2200 to 3200
- 40 to 150
kA
2
s
V
°C
A
54
22 to 32
UNITS
A
°C
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
SD600N/R
16
20
22
28
32
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
2200
2800
3200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
2300
2900
3300
35
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD600N/R Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 600 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
600
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
92
570
100
Maximum RMS forward current
I
F(RMS)
DC at T
C
= 75 °C (04 to 20), T
C
= 36 °C (25 to 32)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
13 000
13 600
10 900
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 450
845
772
598
546
8450
0.78
0.87
0.35
0.31
1.31
940
10 500
11 000
8830
9250
551
503
390
356
5510
0.84
0.88
0.40
m
0.38
1.44
V
kA
2
s
V
kA
2
s
A
54
375
UNITS
A
°C
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
UNITS
- 40 to 180 - 40 to 150
- 55 to 200
0.1
°C
K/W
0.04
50
454
B-8
Nm
g
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.012
0.014
0.017
0.025
0.042
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case T
emperature (°C)
180
170
160
150
140
130
120
110
100
90
80
0
100
200
300 400
500
600
700
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
30°
60°
90°
Conduction Angle
150
140
130
120
110
100
90
80
70
60
50
0
S
D600N/ R S
eries (400V to 2000V)
R
thJC
(DC) = 0.1 K/ W
S
D600N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.1 K/ W
Conduction Angle
30°
60°
90°
120°
180°
120°
180°
100
200
300 400
500
600
700
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Cas T
e emperature (°C)
Maximum Allowable Case T
emperature (°C)
180
170
160
150
140
130
120
110
100
90
80
70
0
200
400
600
30°
60°
90°
120°
180°
DC
800
1000
Conduction Period
150
140
130
120
110
100
90
80
70
60
50
40
30
0
S
D600N/ R S
eries (400V to 2000V)
R
thJC
(DC) = 0.1 K/ W
S
D600N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.1 K/ W
Conduction Period
30°
60°
90°
120°
180°
DC
800
1000
200
400
600
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD600N/R Series
Vishay Semiconductors
800
R
t
Standard Recovery Diodes
(Stud Version), 600 A
Maximum Average Forward Power Loss (W)
04
0.
A
hS
700
600
500
400
300
200
100
0
0
180°
120°
90°
60°
30°
0.
08
W
K/
=
K/
W
02
0.
W
K/
0.
1
K/
W
ta
el
-D
R Limit
MS
R
0.2
K/
W
0.4
K/ W
Conduc tion Angle
0.6
K/ W
S
D600N/ R S
eries
(400V to 2000V)
T
J
= 180°C
100
200
300
400
500
1 K/ W
1.8 K/W
20
600 40
60
80 100 120 140 160 180
Maximum Allowable Ambient T
emperature (°C)
Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average F
orward Power L (W)
oss
1100
1000
900
800
700
600
500 RMS Limit
400
300
200
100
0
Conduction Period
DC
180°
120°
90°
60°
30°
R
0.
04
0.
08
0.1
K/
W
0.2
K/
W
S
D600N/ R S
eries
(400V to 2000V)
T
J
= 180°C
0
200
400
600
800
0.4
K/
0.6 K
/
W
1 K/ W
1.8 K/ W
20
1000 40
Maximum Allowable Ambient T
emperature (°C)
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
th
SA
=
K/
W
K/
W
0.
02
K/
W
-D
el
ta
R
W
60
80 100 120 140 160 180
Maximum Average Forward Power Loss (W)
900
800
700
600
500
400
180°
120°
90°
60°
30°
RMS Limit
R
=
0.
0.
04
02
K/
K/
W
0.
W
06
-D
K/
el
W
ta
R
0.1
K/
W
SA
th
0.2
K/ W
300
200
100
Conduction Angle
0.4 K
/
W
S
D600N/ R S
eries
(2500V to 3200V)
T = 150°C
J
1 K/ W
0
0
100
200
300
400
500
25
600
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Maximum Average Forward Power Los (W)
s
1100
1000
900
800
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Vishay Semiconductors
R
700
600
500
400
300
200
100
0
A
=
0.0
0.0
2K
4K
/W
0.0 / W
6K
-D
/W
elt
a
0.1
R
K/ W
th
S
0.2
K/
W
S
D600N/ R S
eries
(2500V to 3200V)
T = 150°C
J
0.4 K
/
W
1 K/ W
25
0 100 200 300 400 500 600 700 800 900
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 8 - Forward Power Loss Characteristics
12000
10000
Peak Half S Wave Forward Current (A)
ine
10000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 180°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Peak Half S Wave Forward Current (A)
ine
8000
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
8000
6000
6000
4000
S
D600N/ R S
eries
(2500V to 3200V)
2000
1
10
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
4000
S
D600N/ R S
eries
(400V to 2000V)
1
10
100
2000
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
14000
12000
10000
8000
6000
4000
2000
0.01
Fig. 11 - Maximum Non-Repetitive Surge Current
12000
Peak Half S Wave Forward Current (A)
ine
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 180 °C
J
No Voltage Reapplied
R
ated V
RRM
Reapplied
Peak Half S Wave Forward Current (A)
ine
10000
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 150 °C
J
No Voltage Reapplied
R
ated V
RRM
Reapplied
8000
6000
S
D600N/ R Series
(400V to 2000V)
0.1
1
4000
S
D600N/ R S
eries
(2500V to 3200V)
0.1
Puls T
e rain Duration (s)
1
2000
0.01
Pulse T
rain Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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