Target Data rev. A 01/02
IR25XB..
25.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (2500 V
RMS
)
High Thermal Conductivity
Lead free terminals solderable as per MIL-STD-750, Method 2026
High Temperature soldering guaranteed at 260°C/ 8-10secs
UL approval in Progress E215862
Bridge Rectifier
I
O(AV)
= 25A
V
RRM
= 200/ 800V
Description
These IRXB Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply, Induction cooker, Airconditioner, Washing
Machine and Microwave oven.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
IR25XB..
25
98
350
365
610
550
200 to 800
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
IR25XB..
C
1
IR25XB..
Target Data rev. A 01/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
V
RRM
, max repetitive
peak rev. voltage
T
J
= T
J
max.
V
200
400
600
800
V
RMS
, max RMS
voltage
T
J
= T
J
max.
V
140
280
420
560
I
RRM
max.
@ rated V
RRM
T
J
= 25°C
µA
5
5
5
5
I
RRM
max.
@ rated V
RRM
T
J
= 150°C
µA
400
400
400
400
IR25XB..
02
04
06
08
Forward Conduction
Parameters
I
O
I
FSM
Maximum DC output current
Maximum peak, one-cycle
non-repetitive surge current,
following any rated load condition
and with rated V
RRM
reapplied
I t
V
FM
I
RM
V
RRM
2
IR25XB..
25
350
365
610
550
1.05
5.0
400
200 to 800
Unit
A
Conditions
T
C
= 100°C, Resistive & inductive load
t = 10ms
t = 8.3ms
T
J
= 150°C
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse leakage
curren t per diode
Maximum repetitive peak
reverse voltage range
A
2
s
V
µA
V
t = 10ms
t = 8.3ms
T
J
= 25
o
C, I
FM
= 12.5A
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
R
thJC
R
thJA
W
T
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
7.4 (0.26)
1.0
9.0
g (oz)
Nm
Lb.in
Bridge to Heatsink
22
°C/ W
At DC rated current (2)
1.0
°C/ W
At DC rated current (1)
IR25XB..
-55 to 150
Unit
o
Conditions
C
Note (1): Bridge mounted on Aluminun heat sink, use silicon thermal compound for heat transfer and bolt down
using 3mm screw
(2): Bridges mounted in free air without heatsink.
2
IR25XB..
Target Data rev. A 01/02
Ordering Information Table
Device Code
IR
1
1
2
3
4
-
-
-
-
25
2
XB
3
06
4
International Rectifier
Bridge Current - 25Amps
10-7.5mm spacing
Voltage Code: code x 100 = V
RRM
Outline Table
Case Style: IRXB-5S
All dimensions are in millimeters
3
IR25XB..
Target Data rev. A 01/02
Maximum Allowable Case Temperature (°C)
150
140
130
120
110
100
90
80
0
5
10
15
20
25
30
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Instantaneous Forward Current (A)
1000
100
10
Tj = 150˚C
180˚
(Rect)
1
0.1
180˚
(Sine)
Tj = 25˚C
tp = 400µs
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
60
50
40
30
20
10
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
400
350
300
250
200
150
100
1
180˚
(Sine)
180˚
(Rect)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Tj = 150˚C
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/02
4
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