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DF3A6.8F

Description
Protection Diodes against ESD, DF3A6.8F
CategoryDiscrete semiconductor    diode   
File Size255KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF3A6.8F Overview

Protection Diodes against ESD, DF3A6.8F

DF3A6.8F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeZENER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DF3A6.8F
東芝ESD保護用ダイオード
DF3A6.8F
ESD
保護用
※本½品は ESD 保護用ダイオードであり, ESD 保護用以外の用途
(定電圧ダイオード用途を含むがこれに限らない)には½用はできません
単½:
mm
小型パッケージに
2
素子を搭載
(アノードコモン)
しているため, 部品点
数, 実装コストの削減が可½です。
絶対最大定格
(Ta = 25°C)
項目
記号
P
T
j
T
stg
定格
150*
150
−55
~ 150
単½
mW
°C
°C
*:基板付け時(ガラスエポキシ基板面積:20mm×20mm、
銅箔パッド面積:4mm×4mm)
注:
S-Mini
本½品の½用条件
(½用温度/電流/電圧等)
が絶対最大定格以内で
JEDEC
の½用においても½高負荷
(高温および大電流/高電圧印加½多大な
JEITA
温度変化等) で連続して½用される場合は½信頼性が著しく½下す
東芝
1–3G1E
るおそれがあります。
質量:
12 mg (標準)
弊社半導½信頼性ハンドブック
(取り扱い上のご注意とお願いおよ
びディレーティングの考え方と方法) および個別信頼性情報
(信頼
性試験レポート½推定故障率等) をご確認の上½適切な信頼性設計をお願いします。
電気的特性
(Ta = 25°C)
½
記 号
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 5 V
V
R
= 0 V, f=1 MHz
測 定 条 件
最小
6.4
標準
6.8
10
45
最大
7.2
25
0.5
単½
V
μA
pF
端子間容量
(
カ½ード-アノード間
)
1
2009-01-15
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