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DF5A3.3JE(TPL3)

Description
ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,3.3V V(Z),6%,SOT-353VAR
CategoryDiscrete semiconductor    diode   
File Size142KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

DF5A3.3JE(TPL3) Overview

ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,3.3V V(Z),6%,SOT-353VAR

DF5A3.3JE(TPL3) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
Number of components4
Maximum operating temperature150 °C
Maximum power dissipation0.1 W
Nominal reference voltage3.3 V
surface mountYES
Maximum voltage tolerance6%
Working test current5 mA
Base Number Matches1
DF5A3.3JE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A3.3JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
150
−55~150
Unit
MW
°C
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-2W1A
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
=1 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
3.1
Typ.
3.3
115
Max
3.5
130
20
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
1
2007-11-01

DF5A3.3JE(TPL3) Related Products

DF5A3.3JE(TPL3) DF5A3.3JE(TPL3,F) DF5A3.3JE(TE85L)
Description ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,3.3V V(Z),6%,SOT-353VAR ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,3.3V V(Z),6%,SOT-353VAR ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,3.3V V(Z),6%,SOT-353VAR
Is it Rohs certified? incompatible conform to incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS
Diode type ZENER DIODE ZENER DIODE ZENER DIODE
Maximum dynamic impedance 130 Ω 130 Ω 130 Ω
Number of components 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum power dissipation 0.1 W 0.1 W 0.1 W
Nominal reference voltage 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
Maximum voltage tolerance 6% 6% 6%
Working test current 5 mA 5 mA 5 mA
Base Number Matches 1 1 1
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