STS8550
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
Ratings
-30
-25
-6
-800
800
625
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
°
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE*
V
CE(sat)
V
BE
f
T
C
ob
Test Condition
I
C
=-500µA, I
E
=0
I
C
=-1mA, I
B
=0
V
CB
=-15V, I
E
=0
V
CE
=-1V, I
C
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-30
-25
-
85
-
-
-
-
-
-
-
-
-
-
120
19
-
-
-50
300
-0.5
-1.2
-
-
Unit
V
V
nA
-
V
V
MHz
pF
* : h
FE
Rank
/ B : 85~160, C : 120~200, D : 160~300
KST-9013-000
2