Semiconductor
STS9015
PNP Silicon Transistor
Description
•
General purpose application.
•
Switching application.
Features
•
Excellent h
FE
linearity : h
FE
(I
C
=0.1mA) / h
FE
(I
C
=2mA) = 0.95(Typ.)
•
Low noise : NF = 10dB(Max.)
•
Complementary pair with STS9014
Ordering Information
Type NO.
STS9015
Marking
STS9015
Package Code
TO-92
Outline Dimensions
3.45±0.1
4.5±0.1
2.25±0.1
unit : mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ
.
2.54 Typ
.
1 2 3
1.20±0.1
0.38
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9018-000
1
STS9015
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
Ratings
-50
-50
-5
-150
150
625
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
(Ta=25°C)
°
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NF
Test Condition
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1KHz, Rg=10K
Min. Typ. Max.
-
-
100
-
60
-
-
-
-
-
-0.1
-
4
-
-50
-100
1000
-0.3
-
7
10
Unit
nA
nA
-
V
MHz
pF
dB
*: h
FE
rank / B : 100~300, C : 200~600, D : 400~1000.
KST-9018-000
2
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