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BC214L

Description
COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & SWITCHES
CategoryDiscrete semiconductor    The transistor   
File Size25KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & SWITCHES

BC214L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionLEAD FREE, TO-92, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
BC214L
BC214L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -100mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
f = 100MHz
V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
I
C
= -2mA, V
CE
= -5V
f = 1KHz
V
CB
= -10V, f = 1MHz
140
10
pF
-0.6
200
2.0
100
140
120
Min.
-30
-45
-5.0
-15
-15
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics *
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
C
OB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Output Capacitance
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

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