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3N60G-B-TF1-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size358KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

3N60G-B-TF1-T Overview

Transistor

3N60G-B-TF1-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompliant
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
3N60
3 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N60
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 3.6Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Lead-free:
3N60L
Halogen-free: 3N60G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal
3N60-x-TA3-T
3N60-x-TF1-T
3N60-x-TF3-T
3N60-x-TM3-R
3N60-x-TN3-R
Ordering Number
Lead Free
3N60L-x-TA3-T
3N60L-x-TF1-T
3N60L-x-TF3-T
3N60L-x-TM3-R
3N60L-x-TN3-R
Halogen Free
3N60G-x-TA3-T
3N60G-x-TF1-T
3N60G-x-TF3-T
3N60G-x-TM3-R
3N60G-x-TN3-R
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
3N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-22F,
TM3: TO-251, TN3: TO-252
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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