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BC252B

Description
AMPLIFIER TRANSISTORS PNP SILICON
CategoryDiscrete semiconductor    The transistor   
File Size164KB,5 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BC252B Overview

AMPLIFIER TRANSISTORS PNP SILICON

BC252B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)180
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BC252B Related Products

BC252B BC252 BC252A BC252C BC256 BC256A BC256B
Description AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON AMPLIFIER TRANSISTORS PNP SILICON
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 180 120 120 380 125 120 180
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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