The UT54ACS27 and the UT54ACTS27 are triple, three-input
NOR gates. The circuits perform the Boolean functions
Y = A+B+C or Y = A⋅B⋅C in positive logic.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
A
H
X
X
L
B
X
H
X
L
C
X
X
H
L
OUTPUT
Y
L
L
L
H
PINOUTS
14-Pin DIP
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
14-Lead Flatpack
Top View
A1
B1
A2
B2
C2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
C1
Y1
C3
B3
A3
Y3
LOGIC DIAGRAM
LOGIC SYMBOL
A1
B1
C1
A2
B2
C2
A3
B3
C3
(1)
(2)
(13)
(3)
(4)
(5)
(9)
(10)
(11)
(8)
Y3
(6)
Y2
≥1
(12)
A1
B1
C1
A2
B2
C2
A3
B3
C3
Y1
Y1
Y2
Y3
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Power dissipation
2, 8, 9
Output current
10
(Sink)
I
OH
Output current
10
(Source)
I
DDQ
ΔI
DDQ
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
C
L
= 50pF
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
10
1.6
μA
mA
-8
mA
8
.7V
DD
V
DD
- 0.25
-200
200
1.8
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
I
OS
P
total
I
OL
mA
mW/
MHz
mA
3
Notes:
1.Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±10%;
V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
[align=left][font="]Description: [/font][/align][align=left][font="] [/font][font="]This document specifically explains the parameters, performance, power consumption, and interface definitions of the...
Before making hardware, you need to read the following materials: 1. Chip data sheet, which describes the device's pin signals, on-chip resources, electrical indicators and mechanical characteristics ...
The sensor used in our project is LSM6DSM, which is used on the MTK2523 platform. I2C has been adjusted to read and write registers, and the chip ID can be read. The problem now is that the data of th...
On August 24th, Tesla CEO Elon
Musk
revealed information about the upcoming FSD V14, claiming it will outperform human drivers. Tesla FSD lead Ashok stated last year that FSD version 12.5, ...[Details]
On August 25th, SK Hynix announced that it has completed development and entered mass production of its 321-layer, 2Tb QLC NAND flash memory product. This achievement marks the world's first applic...[Details]
1. Ease of Use: The HMI module should be designed to be simple and clear, allowing users to easily operate and configure the energy storage device.
2. Ease of Maintenance: The HMI module should...[Details]
1. Multi-channel DAC technology bottleneck
Currently,
the development of multi-channel DAC technology focuses on two core challenges.
First, industrial applications urgently ...[Details]
On August 22, according to CNBC's report today, the National Highway Traffic Safety Administration (NHTSA) is launching an investigation into Tesla, and the latter is questioned whether it has fail...[Details]
A multilevel inverter converts a DC signal into a multilevel staircase waveform. Instead of a straight positive-negative output waveform, the output waveform of a multilevel inverter alternates in ...[Details]
Wearable technology is taking off, with applications evolving rapidly, from smartwatches to fitness trackers and even smart wigs! Bluetooth Smart is at the center of this revolution. This is the se...[Details]
I recently read an article in the Wall Street Journal titled "We need the right to repair our gadgets" (reference original article: ). The author was very angry about the phenomenon of "planned obs...[Details]
Renesas Electronics introduces a new USB-C power solution with an innovative three-level topology.
Improve performance while reducing system size
New solution combines excel...[Details]
At present, the most troubling thing about pure electric vehicles as new energy sources is not only the range anxiety, but also the disadvantage of long charging time. At present, ternary lithium b...[Details]
The characteristics of electric vehicles place high demands on the motors they use. To increase top speed, the motor should have high instantaneous power and power density (W/kg); to increase drivi...[Details]
The transition to SDVs (software-defined vehicles) involves more than just replacing parts; rather, it involves the organic connection of various elements, from internal vehicle systems to ext...[Details]
The number of new energy vehicles in use is increasing, and there are multiple choices available. New energy vehicles can be divided into hybrid and pure electric, and the types of hybrid include m...[Details]
System Principle
According to the average imbalance rate of the branch three-phase phase line load and the average value of the branch phase line current, the adjustment of the phase line load...[Details]
The field of AI is constantly evolving. We are witnessing a profound shift from the era of "generative AI" to the era of "agent AI." This transformation has the potential to reshape industries an...[Details]
MCU
京公网安备 11010802033920号
EEWORLD
