• Wide power supply operating range of 3.0V to 5.5V
• Available QML Q or V processes
• 16-lead flatpack
• UT54ACTS157E-SMD-5962-96553
DESCRIPTION
The UT54ACTS157E is a monolithic data selector/multiplexer.
A 4-bit word is selected from one of two sources and is routed
to the four outputs. A separate strobe input, G, is provided.
The device is characterized over full HiRel temperature range
of -55°C to +125°C.
FUNCTION TABLE
INPUTS
STROBE
G
H
L
L
L
L
SELECT
A/B
X
L
L
H
H
DATA
A
X
L
H
X
X
B
X
X
X
L
H
Y
L
L
H
L
H
A/B
1A
1B
1Y
2A
2B
2Y
V
SS
16-Lead Flatpack
Top View
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
G
4A
4B
4Y
3A
3B
3Y
LOGIC SYMBOL
(15)
G
(1)
A/B
1A
(2)
1
1
MUX
(4)
(7)
(9)
(12)
1Y
2Y
3Y
4Y
EN
G1
OUTPUT
(3)
1B
(5)
2A
(6)
2B
(11)
3A
(10)
3B
(14)
4A
(13)
4B
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
1
LOGIC DIAGRAM
1A
(2)
(4)
1Y
1B
(3)
2A
(5)
(7)
2Y
2B
3A
(6)
(11)
(9)
3Y
3B
(10)
4A
4B
STROBE G
SELECT A/B
(14)
(12)
(13)
(15)
(1)
4Y
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
108
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D2
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum package power dissipation
permitted @ Tc = +125
o
C
LIMIT
-0.3 to 6.0
-0.3 to V
DD
+0.3
-65 to +150
+175
+300
15
±10
3.3
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, P
D
= (T
j(max)
- T
c(max)
) /
Θ
jc
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACTS157E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL1
V
IL2
V
IH1
V
IH2
I
IN
V
OL1
DESCRIPTION
Low-level input voltage
1
Low-level input voltage
1
High-level input voltage
1
High-level input voltage
1
Input leakage current
Low-level output voltage
3
CONDITION
V
DD
from 4.5V to 5.5V
V
DD
from 3.0V to 3.6V
V
DD
from 4.5V to 5.5V
V
DD
from 3.0V to 3.6V
V
IN
= V
DD
or V
SS
I
OL
= 8mA
V
DD
= 4.5V to 5.5V
V
OL2
Low-level output voltage
3
I
OL
= 6mA
V
DD
= 3.0V to 3.6V
V
OH1
High-level output voltage
3
I
OH
= -8mA
V
DD
from 4.5V to 5.5V
V
OH2
High-level output voltage
3
I
OH
= -6mA
V
DD
from 3.0V to 3.6V
I
OS1
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 3.0V to 3.6V
I
OS2
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 3.0V to 3.6V
I
OL1
Low level output current
9
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 4.5V to 5.5V
I
OL2
Low level output curren
9
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 3.0V to 3.6V
I
OH1
High level output current
9
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
V
DD
from 4.5V to 5.5V
-8
mA
6
mA
8
mA
-100
100
mA
-200
200
mA
2.4
V
0.7 V
DD
V
0.4
V
0.5 V
DD
2.0
-1
1
0.4
MIN
MAX
0.8
0.8
UNIT
V
V
V
V
μA
V
4
I
OH29
High level output current
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
V
DD
from 3.0V to 3.6V
-6
mA
P
total1
Power dissipation
2, 8
C
L
= 50pF
V
DD
= 4.5V to 5.5V
1.3
mW/
MH
Z
mW/
MH
Z
μA
P
total2
Power dissipation
2, 8
C
L
= 50pF
V
DD
= 3.0V to 3.6V
0.75
I
DDQ
ΔI
DDQ
Quiescent Supply Current
V
IN
= V
DD
or V
SS
V
DD
from 3.0V to 5.5V
10
Quiescent Supply Current
Delta
For input under test
V
IN
= V
DD
-2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
ƒ
= 1MHz, V
DD
= 0V
ƒ
= 1MHz, V
DD
= 0V
1.6
mA
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
15
15
pF
pF
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, - 50%,
as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed
to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at a
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for the maximum radiation dose available for the respective device types.
8. Power dissipation specified per switching output.
9. Guaranteed by characterization, but not tested.
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