V
CE
I
C
=
=
1200 V
75 A
IGBT Module LoPak3 NPT
5SNS 0075W120000
Doc. No. 5SYA1510-00 May. 01
Low-loss, rugged IGBT chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact baseless
package
Industry standard package
UL File no. E63532
• •
•
• •
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 60°C
Pulse: tp=1ms, T
hs
= 60°C
Values
1200
75
150
±20
T
hs
= 25°C per switch
I
C
= 150 A, V
CEM
= 1200 V, V
CC
= 1000 V,
V
GE
=
±15
V, T
vj
=125°C
voltages measured on auxiliary terminals
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs,
V
GE
=
±15
V, Tvj =125 °C
75
Pulse: tp = 1ms, T
hs
= 60°C
150
A
A
340
Unit
V
A
A
V
W
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
SCSOA
I
F
I
FM
ABB Semiconductors AG reserves the right to change specifications without notice.
5SNS 0075W120000
Maximum Rated Values
(cont.)
Parameter
Junction Temperature
Storage Temperature
Isolation Voltage
Symbol
T
vj
T
tstg
/T
cop
V
iso
(T
vj
= 25°C, unless specified otherwise)
Conditions
Values
- 40 ~ 150
- 40 ~ 125
Unit
°C
°C
V
Nm
1 min, f = 50Hz
(M5) Hole 5.5mm diameter
Pin: 1.15*1.0 mm
Pitch of pins : 3.81 mm
2500
3~6
Base to Heatsink
Mounting
Main Terminals
PCB mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values
Parameter
Collector-Emitter
Saturation Voltage
Collector Cut-off Current
Gate-Emitter leakage
Current
Gate-Emitter Threshold
Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Symbol
(T
vj
= 25°C, unless specified otherwise)
Conditions
T
vj
= 25 °C
T
vj
= 125 °C
min. typ.
2.45
2.95
6
±500
4.5
800
6
6.5
max. Unit
3.00
V
V
mA
nA
V
nC
nF
nF
nF
µs
µs
µs
µs
mJ
V
CE(sat)
I
C
= 75 A, V
GE
= 15 V
I
CES
I
GES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
V
GE(TO)
I
C
= 3 mA, V
CE
= V
GE
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
I
C
= 75 A, V
CC
= 600 V, R
gon
= 15
Ω,
T
vj
= 125 °C, V
GE
=
±15
V
I
C
= 75 A, V
CC
= 600 V, R
goff
= 15
Ω,
T
vj
= 125 °C,V
GE
=
±15
V
R
gon
= 15
Ω
I
C
= 75 A, T
vj
= 125 °C,
V
CC
= 600 V, V
GE
=
±15
V,
inductive load, integrated up
R
goff
= 15
Ω
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
I
C
= 75 A, V
CE
= 600 V, V
GE
= -15 to 15 V
0.5
0.4
0.09
0.07
0.48
0.06
9.0
Turn-off Switching Energy
Module stray Inductance
Plus to Minus
E
off
L
s DC
8.0
25
mJ
nH
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
2 of 8
5SNS 0075W120000
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Energy
Symbol
V
F
I
rrm
Q
rr
t
rr
E
rec
(T
vj
= 25°C, unless specified otherwise)
Conditions
T
vj
= 25 °C
I
F
= 75 A
T
vj
= 125 °C
min.
typ. max.
2.00
2.00
60
13
0.4
5.0
2.45
V
A
µC
µs
mJ
Unit
I
F
= 75 A, R
gon
= 15
Ω,
V
CC
= 600 V,
V
GE
=
±15
V, T
vj
= 125 °C
I
F
= 75 A, T
vj
= 125 °C, V
CC
= 600 V,
R
gon
= 15
Ω,
V
GE
=
±15
V,
inductive load, fully integrated
Thermal Characteristics
Parameter
IGBT Thermal Resistance
Junction to Heatsink
Diode Thermal Resistance
Junction to Heatsink
Equivalent IGBT Thermal
Resistance Junct. to Case
Equivalent Diode Thermal
Resistance Junct. to Case
Symbol
R
th
j-h
Igbt
R
th
j-h
Diode
R
th
j-c
Igbt
R
th
j-c
Diode
(T
j
= 25°C, unless specified otherwise)
Conditions
min.
typ.
max.
Unit
0.370 °C/W
Heatsink:
flatness < +/- 20 µm,
roughness < 6 µm without ridge
Thermal grease:
thickness: 30 µm < t < 50 µm
0.740 °C/W
0.235 °C/W
0.550 °C/W
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Surface Creepage
Distance
Weight
Symbol
Conditions
min.
typ.
max.
Unit
mm
mm
mm
mm
mm
215
gr
L* W* H Typical , see outline drawing
D
C
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
121.5 * 61.5 * 20.5
8.5
9.5
12.5
15.5
D
SC
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
3 of 8
5SNS 0075W120000
Electrical configuration
Outline drawing
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
4 of 8
5SNS 0075W120000
Fig. 1
Typ. Output Characteristics at Tvj=25°C
Fig. 2
Typ. Output Characteristics at Tvj=125°C
Fig. 3
Typ. Transfer Characteristics
Fig. 4
Typ. Gate charge Characteristics
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1510-00 May. 01
5 of 8
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