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5SNR13H2500

Description
Insulated Gate Bipolar Transistor, 1300A I(C), 2500V V(BR)CES, N-Channel, PRESS-PACK-7
CategoryDiscrete semiconductor    The transistor   
File Size578KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SNR13H2500 Overview

Insulated Gate Bipolar Transistor, 1300A I(C), 2500V V(BR)CES, N-Channel, PRESS-PACK-7

5SNR13H2500 Parametric

Parameter NameAttribute value
MakerABB
package instructionSPECIAL SHAPE, R-XXSS-X7
Contacts7
Reach Compliance Codecompliant
Shell connectionEMITTER
Maximum collector current (IC)1300 A
Collector-emitter maximum voltage2500 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XXSS-X7
Number of components1
Number of terminals7
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSPECIAL SHAPE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
transistor applicationsGENERAL PURPOSE SWITCHING
Transistor component materialsSILICON
Nominal off time (toff)2400 ns
Nominal on time (ton)1400 ns
Base Number Matches1
V
CE
I
C
=
=
2500 V
1300 A
ABB StakPak H Series
Press-pack IGBT
5SNR 13H2500
Doc. No. 5SYA1517-02 May. 04
High SOA
Fails into stable shorted state
High tolerance to uneven
mounting pressure
Designed for series connection
Explosion resistant package
Modular design concept,
available for a wide range of
current ratings
Maximum Rated Values
1)
Parameter
2)
Collector-emitter voltage
DC collector current
Repetitive peak collector
current
Gate-emitter voltage
Total power dissipation
DC forward current
Repetitive peak forward
current
Surge current
IGBT short circuit SOA
Junction temperature
Storage temperature
Mounting force
1)
2)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FM
I
FSM
t
psc
T
vj
T
stg
F
M
T
c
= 75 °C
Conditions
min
max
2500
1300
2600
±
20
Unit
V
A
A
V
W
A
A
kA
µs
°C
°C
kN
T
c
= 25 °C, (IGBT)
T
c
= 75 °C
12000
1300
2600
V
R
= 0 V, t
p
= 10 ms, T
vj
= 125 °C,
half-sinewave
V
CC
= 1500 V, V
CEM
2500 V,
V
GE
≤15V
5
-40
50
16.5
10
125
70
80
2)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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