V
CE
I
C
=
=
2500 V
1000 A
ABB StakPak™ H Series
Press-pack IGBT
5SNR 10H2501
PRELIMINARY
Doc. No. 5SYA1580-03 May. 07
•
High SOA
•
Fails into stable shorted state
•
High tolerance to uneven
mounting pressure
•
Designed for series connection
•
Explosion resistant package
•
Modular design concept,
available for a wide range of
current ratings
•
SPT chip set
Maximum Rated Values
1)
Parameter
2)
Collector-emitter voltage
DC collector current
Repetitive peak collector
current
Gate-emitter voltage
Total power dissipation
DC forward current
Repetitive peak forward
current
Surge current
IGBT short circuit SOA
Junction temperature
Storage temperature
Mounting force
2)
1)
2)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FM
I
FSM
t
psc
T
vj
T
stg
F
M
T
c
= 75 °C
Conditions
min
max
2500
1000
2000
±
20
Unit
V
A
A
V
W
A
A
kA
µs
°C
°C
kN
T
c
= 25 °C, (IGBT)
T
c
= 75 °C
10000
1000
2000
V
R
= 0 V, t
p
= 10 ms, T
vj
= 125 °C,
half-sinewave
V
CC
= 1500 V, V
CEM
≤
2500 V,
V
GE
≤15V
5
-40
40
12.4
10
125
70
75
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNR 10H2501
IGBT Characteristic Values
3)
Parameter
Collector-emitter saturation
voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Symbol
V
CEsat
I
CES
I
GES
V
GE(TO)
I
C
= 1000 A,
V
GE
= 15 V
V
CE
= 2500 V, V
GE
= 0 V,
V
CE
= 0 V, V
GE
=
±20
V,
I
C
= 180 mA, V
CE
= V
GE
,
V
CC
= 1250 V,
I
C
= 1000 A,
R
G
= 3.9
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
V
CC
= 1250 V,
I
C
= 1000 A,
R
G
= 5.6
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
Conditions
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 125 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 25°C
5
7
1
min
typ
2.20
2.70
18
max
2.60
3.00
50
±500
8.5
Unit
V
V
mA
nA
V
J
Turn-on energy
E
on
T
vj
= 125°C
1.5
J
T
vj
= 25°C
1.4
J
Turn-off energy
E
off
T
vj
= 125°C
1.8
J
3)
Characteristic values according to IEC 60747-9
Diode Characteristic Values
4)
Parameter
Forward voltage
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery energy
4)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
I
F
= 1000 A
Conditions
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
V
CC
= 1250 V,
I
F
= 1000 A,
R
G
= 3.9
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
min
typ
1.95
1.90
760
950
560
950
1.3
1.8
0.52
0.86
max
2.20
2.20
Unit
V
V
A
A
µC
µC
µs
µs
J
J
Characteristic values according to IEC 60747-2
Thermal Properties
Parameter
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
IGBT thermal resistance case
to heatsink
Diode thermal resistance
case to heatsink
Operating junction
temperature
Symbol
R
th(j-c)
IGBT
R
th(j-c)
Diode
R
th(c-h)
IGBT
R
th(c-h)
Diode
T
vjop
Heatsink flatness :
Complete module area < 100 µm
Each submodule area < 20 µm
Roughness : < 1.6 µm
5
4
K/kW
Conditions
min
typ
max
11
22
2
Unit
K/kW
K/kW
K/kW
125
°C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1580-03 May. 07
page 2 of 4
5SNR 10H2501
Mechanical Properties
Parameter
Dimensions
Symbol
L* W* H
Conditions
Typical , see outline drawing
min
typ
max
Unit
mm
236*150*26
Clearance distance
Surface creepage distance
Weight
D
C
D
SC
acc. IEC 60664-1 and EN50124-1
acc. IEC 60664-1 and EN50124-1
10
23
1.9
mm
mm
kg
Z
thIC
[K/kW]
2
Analytical function for transient thermal
impedance:
10
1
9
8
7
6
5
4
3
Diode
Z
th (j - c)
(t) =
∑
R
i
(1 - e
i
=
1
IGBT
n
- t/
τ
i
)
2
i
8
7
6
5
4
3
1
4.569
580.8
9.137
580.8
2
4.611
53.11
9.223
53.11
3
0.945
3.286
1.889
3.286
4
0.804
0.609
1.607
0.609
IGBT
10
0
9
Ri(K/kW)
τ
i
(ms)
Ri(K/kW)
τ
i
(ms)
F
m
= 40...75 kN
Double Side Cooling
2
10
-3
2
3 4 5 6 7 89
10
-2
2
3 4 5 6 7 89
10
-1
2
3 4 5 6 7 89
10
0
2
3 4 5 6 7 89
10
1
t [s]
Fig.15
Maximum thermal impedance of IGBT
and diode versus time
Environmental class according to IEC 60721
Mode
Storage
Transportation
Operation
Class
IE 11
IE 23
IE 33
Document - no.
5 SZK 9101-01
5 SZK 9102-01
5 SZK 9103-01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1580-03 May. 07
page 3 of 4
DIODE
5SNR 10H2501
Electrical configuration
C (Collector)
E (Emitter)
G (Gate)
AE (Aux. Emitter)
Outline drawing
StakPak H3
This is an electrostatic sensitive device.
Please observe the international standard IEC 60747-1, chapter IX.
This product has been designed and qualified for Industrial Level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNR 20H2501 ABCD 01
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Doc. No. 5SYA1580-03 May. 07
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abb.com/semiconductors
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