5SMX12E1250 datasheet, PDF - EEWORLD Datasheet

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5SMX12E1250: DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, 6.60 X 6.50 MM, DIE-2; CategoryDiscrete semiconductor The transistor; File Size31KB，2 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMX12E1250 Overview

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, 6.60 X 6.50 MM, DIE-2

5SMX12E1250 Parametric

Parameter Name	Attribute value
Maker	ABB
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	550 ns
Nominal on time (ton)	150 ns
Base Number Matches	1

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Turn-on delay time

Rise time

Turn-on switching energy

Turn-off delay time

Fall time

Turn-off switching energy

Internal gate resistance

Input capacitance

Total gate charge

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