V
CE
I
C
=
=
2500 V
700 A
IGBT Press pack
5SNA 0700D250003
Doc. No. 5SYA1504-02 Apr.01
Low on-state voltage drop
Integrated heat sink
Short Circuit rated
Highly rugged switching SOA
Low forward voltage
High Voltage, high current
capability
Designed for series connection
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Symbol
V
CES
I
C
I
C M
V
GES
•
•
•
•
•
•
•
(T
j
= 25°C, unless specified otherwise)
Conditions
V
GE
= 0 V, I
c
= 10 mA
T
hs
= 40 °C
Pulse: t
p
=1ms, T
hs
= 40 °C
Rating
2500
700
1400
±
20
V
A
A
V
SwSOA I
C
= 1400 A, V
CEM
= 2500 V, V
CC
= 0 V, V
G E
=
±15
V,
T
j
=125 °C
SCSOA V
CC
= 1500 V, V
CEM
= 2500 V, t
p
= 10 µs, V
GE
=
±15
V,
T
j
= 125 °C
I
F
T
hs
= 40 °C
700
I
F M
Pulse: t
p
= 1ms, T
hs
= 40 °C
1400
A
A
ABB Semiconductors AG reserves the right to change specifications without notice.
5SNA 0700D250003
IGBT Characteristic Values
Parameter
Collector-Emitter Saturation
Voltage
Collector-Emitter Leakage
Current
Gate-Emitter leakage Current
Gate-Emitter Threshold Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
I
CES
I
GES
V
GEth
Q
G
C
iss
C
oss
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
(T
j
=25 °C, unless other spec.)
Symbol
V
CE(sat)
Conditions
T
j
= 25 °C
I
C
= 700 A, V
GE
= 15 V
T
j
= 125 °C
min. typ. max. Unit
2.40
3.00
20
±500
5.0
7.0
6.2
100
8.5
2.80
3.40
V
V
mA
nA
V
µC
nF
nF
nF
µs
µs
µs
µs
J
J
V
CE
= 2500 V, V
GE
= 0 V, T
j
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
j
= 125 °C
I
C
= 120 mA, V
CE
= V
GE
I
C
= 700 A, V
CE
= 200 V, V
GE
= -15 to 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
10
3
I
C
= 700 A, V
CC
= 1250 V, R
gon
= 10
Ω,
T
j
= 125 °C, V
GE
=
±15
V
I
C
= 700 A, V
CC
= 1250 V, R
goff
= 10
Ω,
T
j
= 125 °C,V
GE
=
±15
V
R
gon
= 10
Ω
R
goff
= 10
Ω
I
C
= 700 A, T
j
= 125 °C,
V
CC
= 1250 V, V
GE
=
±15
V,
inductive load
1.4
1.0
1.9
0.6
1.35
1.15
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Energy
(T
j
= 25 °C, unless other spec.)
Symbol
V
F
I
rrm
Q
rr
t
rr
I
F
= 700 A
Conditions
T
j
=
T
j
=
25 °C
125 °C
min.
typ. max.
2.00
2.00
350
2.40
2.40
Unit
V
A
µC
µs
mJ
I
F
= 700 A, R
gon
= 10
Ω,
V
CC
= 1250 V,
V
GE
=
±15
V
I
F
= 700 A, T
j
= 125 °C, V
CC
= 1250 V,
R
gon
= 10
Ω
390
3
265
E
rec
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1504-02 Apr.01
2 of
4
5SNA 0700D250003
Thermal Characteristics
Parameter
IGBT Thermal Resistance
Junction. to Case
Diode Thermal Resistance
Junction to Case
Junction Temperature
Storage Temperature
(T
j
=25 °C, unless other spec.)
Symbol
Conditions
min.
typ. max.
0.032
0.095
Unit
K/W
K/W
°C
°C
R
thJW
IGBT Water flow: 12 l/min
R
thJW
Diode
T
j
T
tstg
/T
cop
5
5
125
125
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Surface Creepage Distance
Mounting Force
Weight
Symbol
L* W* H
D
C
D
SC
F
M
Conditions
Typical , see outline drawing
acc. IEC 664-1 and prEN50124-1:1995
acc. IEC 664-1 and prEN50124-1:1995
min.
typ. max.
25
39
Unit
mm
mm
mm
183 * 96 * 51
18
1.4
50
kN
kg
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1504-02 Apr.01
3 of
4
5SNA 0700D250003
Electrical configuration
Outline drawing
51
183
80
Gate
Emitter
96
Collector
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
Info@ch.abb.com
www.abbsem.com
13
Doc. No. 5SYA1504-02 Apr.01
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