5962-895618VTC datasheet, PDF - EEWORLD Datasheet

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5962-895618VTC: DescriptionStandard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, FP-32; Categorystorage storage; File Size290KB，15 Pages; ManufacturerAtmel (Microchip)

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5962-895618VTC Overview

Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, FP-32

5962-895618VTC Parametric

Parameter Name	Attribute value
Maker	Atmel (Microchip)
Parts packaging code	DFP
package instruction	DFP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	45 ns
JESD-30 code	R-XDFP-F32
JESD-609 code	e4
length	20.825 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	UNSPECIFIED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.72 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.415 mm
Base Number Matches	1

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Features

•

Operating Voltage: 5V

•

Access Time: 30, 45 ns

•

Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Package

TTL Compatible inputs and Outputs

Asynchronous

Single 5V Supply

Equal Cycle and Access Time

Gated Inputs:

– No Pull-up/down

– Resistors Are Required

QML Q and V with SMD 5962-89598

•

Rad. Tolerant

128K x 8

Very Low Power

5V CMOS SRAM

M65608E

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151G–AERO–06/02

5962-895618VTC Related Products

	5962-895618VTC	5962-895618VZC	5962-895618MZC	5962-895647VZC	5962-895647VTC	5962-895618MTC	5962-895647QZC	5962-895647QTC
Description	Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, FP-32	Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32	Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32	Standard SRAM, 128KX8, 30ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32	Standard SRAM, 128KX8, 30ns, CMOS, 0.400 INCH, FP-32	Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, FP-32	Standard SRAM, 128KX8, 30ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32	Standard SRAM, 128KX8, 30ns, CMOS, 0.400 INCH, FP-32
Maker	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	DFP	DIP	DIP	DIP	DFP	DFP	DIP	DFP
package instruction	DFP,	0.400 INCH, SIDE BRAZED, DIP-32	0.400 INCH, SIDE BRAZED, DIP-32	DIP,	DFP,	DFP,	DIP,	DFP,
Contacts	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	45 ns	45 ns	45 ns	30 ns	30 ns	45 ns	30 ns	30 ns
JESD-30 code	R-XDFP-F32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	R-XDFP-F32	R-XDFP-F32	R-CDIP-T32	R-XDFP-F32
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4
length	20.825 mm	40.64 mm	40.64 mm	40.64 mm	20.825 mm	20.825 mm	40.64 mm	20.825 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
encapsulated code	DFP	DIP	DIP	DIP	DFP	DFP	DIP	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE	IN-LINE	IN-LINE	FLATPACK	FLATPACK	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
Maximum seat height	2.72 mm	4.32 mm	4.32 mm	4.32 mm	2.72 mm	2.72 mm	4.32 mm	2.72 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	NO	YES	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
Terminal form	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	FLAT	FLAT	THROUGH-HOLE	FLAT
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.415 mm	10.16 mm	10.16 mm	10.16 mm	10.415 mm	10.415 mm	10.16 mm	10.415 mm

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