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PHW45NQ10T

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size107KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PHW45NQ10T Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

PHW45NQ10T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)47 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
QUICK REFERENCE DATA
d
FEATURES
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
V
DSS
= 100 V
I
D
= 47 A
g
R
DS(ON)
25 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB45NQ10T is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
SOT429 (TO247)
gate
drain
1
source
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
47
33
188
150
175
UNIT
V
V
V
A
A
A
W
˚C
1
It is not possible to make connection to pin 2 of the SOT404 package.
August 1999
1
Rev 1.000
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