Latch-up Current ................................................... > 200 mA
Operating Range
Device
CY62137CV25
CY62137CV30
CY62137CV33
CY62137CV
Range
Industrial
Ambient
Temperature T
A
V
CC
2.7V to 3.3V
3.0V to 3.6V
2.7V to 3.6V
–40°C to +85°C 2.2V to 2.7V
CY62137CV30 Automotive –40°C to +125°C 2.7V to 3.3V
Product Portfolio
Power Dissipation
Operating, I
CC
(mA)
V
CC
Range (V)
Product
CY62137CV25LL
CY62137CV30LL
CY62137CV30LL
CY62137CV33LL
CY62137CVLL
CY62137CVSL
Range
Industrial
Industrial
Automotive
Industrial
Industrial
Industrial
Min. Typ.
2.2
2.7
2.7
3.0
2.7V
2.7V
[5]
Max.
2.7
3.3
3.3
3.6
3.6
3.6
Speed
(ns)
55
70
55
70
70
55
70
70
70
f = 1 MHz
Typ.
[5]
f = f
max
Typ.
7
5.5
7
5.5
5.5
7
5.5
5.5
5.5
[5]
Standby, I
SB2
(µA)
Typ.
[5]
2
2
2
5
5
1
Max.
10
10
15
15
15
5
Max.
3
3
3
3
3
3
3
3
3
Max.
15
12
15
12
15
15
12
12
12
2.5
3.0
3.0
3.3
3.3
3.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
Notes:
2. NC pins are not connected to the die.
3. E3 (DNU) can be left as NC or V
SS
to ensure proper application.
4. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
Document #: 38-05201 Rev. *E
Page 2 of 12
CY62137CV25/30/33 MoBL
®
CY62137CV MoBL
®
Electrical Characteristics
Over the Operating Range
CY62137CV25-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled
V
CC
= 2.7V
I
OUT
= 0 mA
CMOS Levels
Test Conditions
I
OH
= –0.1 mA
I
OL
= 0.1 mA
V
CC
= 2.2V
V
CC
= 2.2V
1.8
–0.3
–1
–1
7
1.5
2
Min.
2.0
0.4
V
CC
+
0.3V
0.6
+1
+1
15
3
10
1.8
–0.3
–1
–1
5.5
1.5
2
Typ.
[5]
CY62137CV25-70
Min.
2.0
0.4
V
CC
+
0.3V
0.6
+1
+1
12
3
10
µA
Typ.
[5]
Max.
Unit
V
V
V
V
µA
µA
mA
Max.
V
CC
Operating Supply f = f
MAX
= 1/t
RC
Current
f = 1 MHz
I
SB1
Automatic CE
CE > V
CC
– 0.2V
Power-down Current— V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
CMOS Inputs
f = f
max
(Address and Data Only),
f=0 (OE, WE, BHE, and BLE)
Automatic CE
CE > V
CC
– 0.2V
Power-down Current— V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
CMOS Inputs
f = 0, V
CC
= 2.7V
I
SB2
CY62137CV30-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
GND < V
O
< V
CC
,
Output Disabled
Ind’l
Auto
Ind’l
Auto
V
CC
= Ind’l
3.3V
Auto
I
OUT
=
0 mA
CMOS
Levels
Ind’l
Auto
7
1.5
15
3
–1
+1
Test Conditions
I
OH
= –1.0 mA
I
OL
= 2.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
2.2
–0.3
–1
Min.
2.4
0.4
V
CC
+
0.3V
0.8
+1
Typ.
[5]
Max.
CY62137CV30-70
Min.
2.4
0.4
2.2
–0.3
–1
–2
–1
–2
5.5
5.5
1.5
V
CC
+
0.3V
0.8
+1
+2
+1
+2
12
15
3
mA
µA
Typ.
[5]
Max.
Unit
V
V
V
V
µA
V
CC
Operating Supply f = f
MAX
= 1/t
RC
Current
f = 1 MHz
I
SB1
Automatic CE
CE > V
CC
– 0.2V
Power-down Current— V
IN
> V
CC
– 0.2V
CMOS Inputs
or V
IN
< 0.2V,
f = f
max
(Address
and Data Only),
f=0 (OE, WE,
BHE, and BLE)
Automatic CE
CE > V
CC
– 0.2V
Power-down Current— V
IN
> V
CC
– 0.2V
CMOS Inputs
or V
IN
< 0.2V
f = 0, V
CC
= 3.3V
2
10
2
2
10
15
µA
I
SB2
Ind’l
Auto
2
10
2
2
10
15
Document #: 38-05201 Rev. *E
Page 3 of 12
CY62137CV25/30/33 MoBL
®
CY62137CV MoBL
®
Electrical Characteristics
Over the Operating Range
CY62137CV33-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply Cur-
rent
Automatic CE
Power-down Current
—CMOS Inputs
Automatic CE
Power-down Current
—CMOS Inputs
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V
I
OUT
= 0 mA
CMOS Levels
Test Conditions
I
OH
= –1.0 mA
I
OL
= 2.1 mA
V
CC
= 3.0V
V
CC
= 2.7V
V
CC
= 3.0V
V
CC
= 2.7V
2.2
–0.3
–1
–1
7
1.5
5
V
CC
+
0.3V
0.8
+1
+1
15
3
15
2.2
–0.3
–1
–1
5.5
1.5
5
0.4
2.4
CY62137CV33-70
CY62137CV-70
2.4
2.4
0.4
0.4
V
CC
+
0.3V
0.8
+1
+1
12
3
15
µA
V
V
V
V
V
V
µA
µA
mA
Min. Typ.
[5]
Max. Min. Typ.
[5]
Max. Unit
I
SB1
CE > V
CC
– 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f=0 (OE, WE, BHE, and BLE)
CE > V
CC
– 0.2V
LL
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
SL
f = 0, V
CC
= 3.6V
I
SB2
5
15
5
1
15
5
Capacitance
[6]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[6]
Thermal Resistance
(Junction to Case)
[6]
Test Conditions
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
BGA
55
16
Unit
°C/W
°C/W
AC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
R1
ALL INPUT PULSES
V
CC
Typ
10%
GND
Rise TIme: 1 V/ns
90%
90%
10%
Fall Time: 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
V
TH
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.5V
16600
15400
8000
1.20
3.0V
1105
1550
645
1.75
3.3V
1216
1374
645
1.75
Unit
Ω
Ω
Ω
V
Note:
6. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05201 Rev. *E
Page 4 of 12
CY62137CV25/30/33 MoBL
®
CY62137CV MoBL
®
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.5V
LL
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
SL
Ind’l
Auto
Ind’l
0
t
RC
Conditions
Min.
1.5
1
Typ.
[5]
Max.
V
ccmax
6
8
4
ns
ns
µA
Unit
V
t
CDR[6]
t
R[7]
Chip Deselect to Data Retention Time
Operation Recovery Time
Data Retention Waveform
[8]
DATA RETENTION MODE
V
CC
CE or
V
CC(min.)
t
CDR
V
DR
> 1.5 V
V
CC(min.)
t
R
BHE.BLE
Switching Characteristics
Over the Operating Range
[9]
55 ns
Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE[11]
t
HZBE
Write Cycle
[13]
t
WC
t
SCE
t
AW
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
55
45
45
70
60
60
ns
ns
ns
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
[10]
OE HIGH to High-Z
[10, 12]
CE LOW to Low-Z
[10]
CE HIGH to High-Z
[10, 12]
CE LOW to Power-up
CE HIGH to Power-down
BHE/BLE LOW to Data Valid
BHE/BLE LOW to Low-Z
[10]
BHE/BLE HIGH to High-Z
[10, 12]
5
20
0
55
55
5
25
10
20
0
70
70
5
20
10
25
10
55
25
5
25
55
55
10
70
35
70
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min
Max
Min
70 ns
Max
Unit
Notes:
7. Full-device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100
µs
or stable at V
CC(min.)
> 100
µs.
8. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
9. Test conditions assume signal transition time of 5 ns or less, timing reference levels of V
CC(typ.)
/2, input pulse levels of 0 to V
CC(typ.)
, and output loading of the
specified I
OL
/I
OH
and 30-pF load capacitance.
10. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any
given device.
11. If both byte enables are toggled together this value is 10 ns.
12. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
13. The internal write time of the memory is defined by the overlap of WE, CE = V
IL
, BHE and/or BLE = V
IL
. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
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