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PUB4114

Description
Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
CategoryDiscrete semiconductor    The transistor   
File Size84KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PUB4114 Overview

Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PUB4114 Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionSIP-10
Contacts10
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)7 A
Collector-emitter maximum voltage20 V
ConfigurationCOMMON EMITTER, 4 ELEMENTS
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T10
Number of components4
Number of terminals10
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Power Transistor Arrays
PUB4114
(PU4114)
Silicon NPN triple diffusion planar type
For power amplification and switching
Complementary to PUB4214 (PU4214)
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
NPN 4 elements
9.5
±0.2
8.0
±0.2
Unit: mm
25.3
±0.2
4.0
±0.2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
9
×
2.54 = 22.86
±0.25
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
40
20
5
7
12
15
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.5
±0.15
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
2 A
I
C
=
5 A, I
B
=
0.16 A
I
C
=
5 A, I
B
=
0.16 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
C
=
2 A
I
B1
=
66 mA, I
B2
= −66
mA
150
110
0.3
0.3
0.1
45
60
260
0.6
1.5
V
V
MHz
pF
µs
µs
µs
Min
20
50
50
Typ
Max
Unit
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3
2
1
4
5
6
7
8
10
9
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00005AED
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