PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs
designed for use in cellular power amplifiers in the 725 to 770 MHz
frequency band. Features include internal I/O matching, and
thermally-enhanced, ceramic open-cavity packages. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA071701E*
Package H-36248-2
PTFA071701F*
Package H-37248-2
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 900 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
-20
60
55
Features
•
•
•
Drain Efficiency (%)
Thermally-enhanced packages, Pb-free and
RoHS-compliant
Broadband internal matching
Typical CDMA2000 performance at 770 MHz, 30 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
Typical CW performance, 770 MHz, 30 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
170 W (CW) output power
Intermodulation Distortion (dBc)
-25
-30
-35
-40
-45
-50
-55
-60
-65
44
46
48
50
52
54
IM3
IM5
Efficiency
50
45
40
35
30
25
•
•
•
•
IM7
20
15
Output Power, PEP (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.0 A, P
OUT
= 40 W average,
ƒ
1
= 760, ƒ
2
= 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
—
—
—
Typ
18.5
32
–36
Max
—
—
—
Unit
dB
%
dBc
η
D
ACPR
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 0.9 A, P
OUT
= 150 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18.0
44
—
Typ
18.7
46
–29.5
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.48
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.0 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 170 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–0.5 to +12
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA071701E V4
PTFA071701E V4 R250
PTFA071701F V4
PTFA071701F V4 R250
Package Type
H-36248-2
H-36248-2
H-37248-2
H-37248-2
Package Description
Slotted flange, single-ended
Slotted flange, single-ended
Earless flange, single-ended
Earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 9
Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 0.9 A, ƒ = 770 MHz
21
20
19
65
55
50
Broadband Performance
V
DD
= 30 V, I
DQ
= 900 mA, P
OUT
= 75 W
0
-5
-10
-15
Gain (dB), Efficiency (%)
45
Gain (dB)
Gain
45
35
25
40
35
18
17
16
15
30
35
40
45
50
55
Return Loss
30
25
20
15
700
-20
-25
Efficiency
15
5
Gain
-30
-35
790
730
760
Output Power (dBm)
Frequency (MHz)
CW Performance at Selected Voltages
I
DQ
= 0.9 A, ƒ = 770 MHz
64
60
21
21
20
Power Sweep
V
DD
= 30 V, ƒ = 770 MHz
Gain
20
I
DQ
= 1.3 A
I
DQ
= 1.1 A
Drain Efficiency (%)
Power Gain (dB)
56
52
48
44
40
V
DD
= 32 V
V
DD
= 30 V
V
DD
= 28 V
51
52
53
19
18
17
16
15
14
48
49
50
19
18
17
Gain (dB)
I
DQ
= 0.9 A
16
15
30
35
40
45
50
55
I
DQ
= 0.7 A
Efficiency
36
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03, 2009-11-11
Input Return Loss (dB)
Drain Efficiency (%)
Efficiency
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
2-Carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1.0 A, ƒ = 765 MHz
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
-25
70
60
1.03
1.556 A
3.1 A
6.22 A
T
CASE
= 25°C
T
CASE
= 90°C
IM3
Normalized Bias Voltage (V)
-30
-35
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
Drain Efficiency (%)
50
40
30
20
10
0
32
34
36
38
40
ACPR (dBc)
7.76 A
9.32 A
10.88 A
12.44 A
14 A
-40
-45
ACPR
Efficiency
42
44
46
48
-50
-55
-60
0
20
40
60
80
100
Output Power (dBm)
Case Temperature (°C)
Broadband Circuit Impedance
-
W
AV
E
LE
NGT
H
S T
OW
AR
Z
0
= 50
Ω
D
Z Source
Z Load
0.0
0.1
G
S
Z Load
725 MHz
0. 1
W
ARD
LOA
D
-
T HS
T
O
L ENG
VE
770 MHz
Z Source
Frequency
MHz
725
736
748
759
770
R
Z Source
Ω
jX
–3.730
–3.470
–3.240
–3.050
–2.890
2.690
2.680
2.700
2.720
2.690
Z Load
Ω
R
2.070
2.020
1.980
1.930
1.900
jX
–1.27
–1.08
–0.84
–0.64
–0.46
W
<---
A
0.
2
Data Sheet
4 of 9
Rev. 03, 2009-11-11
0.2
0 .1
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Reference Circuit
0.001µF
R2
1.3K
V
R1
1.2K
V
QQ1
LM7805
V
DD
Q1
BCP56
C2
0.001µF
R3
2K
V
C3
0.001µF
R4
2K
V
R6
5.1K
V
C4
0.1µF
R5
2K
V
R7
10
V
C5
10µF
35V
R8
5.1K
V
C6
4.7µF
C7
0.1µF
C8
62pF
C12
62pF
C13
2.2µF
C14
10µF
50V
L1
V
DD
C15
0.1µF
C16
10µF
50V
l
4
l
6
C9
62pF
J1
R9
10
V
DUT
C22
3.3pF
C24
62pF
l
1
l
2
l
3
C10
3.9pF
l
5
C11
6.2pF
l
8
l
9
l
10
C23
3.3pF
L2
l
11
l
12
J2
l
7
C17
62pF
C18
2.2µF
C19
10µF
50V
C20
0.1µF
C21
10µF
50V
Reference circuit schematic for
ƒ
= 770 MHz
Circuit Assembly Information
DUT
PTFA071701E or PTFA071701F
PCB
0.76 mm [.030"] thick,
ε
r
= 3.48
Microstrip
l1
l2
l3
l4
l5
l6, l7
l8
l9
(taper)
l10
(taper)
l11
l12
Data Sheet
Electrical Characteristics at 770 MHz
0.025
0.053
0.035
0.148
0.094
0.103
0.139
0.062
0.002
0.005
0.016
λ,
50.7
Ω
λ,
38.4
Ω
λ,
38.4
Ω
λ,
76.7
Ω
λ,
7.8
Ω
λ,
44.5
Ω
λ,
8.4
Ω
λ,
8.4
Ω
/ 33.8
Ω
λ,
33.8
Ω /
38.4
Ω
λ,
38.4
Ω
λ,
50.7
Ω
5 of 9
LDMOS Transistor
Rogers RO4350
Dimensions: L x W ( mm)
5.84 x 1.65
12.32 x 2.54
8.00 x 2.54
35.94 x 0.76
20.32 x 17.78
24.13 x 2.03
29.97 x 16.51
13.46 x 16.51 / 3.05
0.51 x 3.05 / 2.54
1.27 x 2.54
3.76 x 1.65
1 oz. copper
Dimensions: L x W (in.)
0.230
0.485
0.315
1.415
0.800
0.950
1.180
0.530
0.020
0.050
0.148
x 0.065
x 0.100
x 0.100
x 0.030
x 0.700
x 0.080
x 0.650
x 0.650 / 0.120
x 0.120 / 0.100
x 0.100
x 0.065
Rev. 03, 2009-11-11
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