8 TO 12 GHz DOUBLE-BALANCED MIXER
MODEL: DM0812LW2
FEATURES
• RF/LO coverage ......... 8 to 12 GHz
• IF operation ............... DC to 4 GHz
• LO power range ......... +7 to +13 dBm
• Conversion loss
(midband RF) ............. 4.5 dB typical
• LO-to-RF isolation ....... 35 dB typical
MITEQ’s DM0812LW2 mixer is constructed using new, highly efficient, double-tuned microstrip RF and LO baluns
with a DC-coupled IF structure. The construction, coupled with the hermetic packaging, provides for high inher-
ent reliability and isolation over an octave frequency range. This device performs as an up- or downconverter cov-
ering most X-band and communication applications. This mixer is also available with medium or high forward volt-
age diodes (M, H) yielding proportional changes in LO power and spurious performance.
ELECTRICAL SPECIFICATIONS
INPUT PARAMETERS
RF frequency range
RF VSWR (RF = -10 dBm)
LO frequency range
LO power range
LO VSWR
LO = +10 dBm
RF off
CONDITION
LO = +10 dBm
LO = +10 dBm
CONDITION
UNITS
GHz
Ratio
GHz
dBm
Ratio
8
+7
1.5:1
MIN.
8
1.5:1
12
+13
TYP.
MAX.
12
TRANSFER CHARACTERISTICS
Conversion loss (IF = 100 MHz)
Single-sideband noise figure
Isolation – LO to RF
Isolation – LO to IF
Isolation – IF to RF
Input power at 1 dB compression
Input two-tone third-order intercept point
OUTPUT PARAMETERS
IF frequency range
IF VSWR (IF = -10 dBm, LO = +10 dBm)
UNITS
dB
dB
dB
dB
dB
dBm
dBm
MIN.
TYP.
4.5
5
MAX.
6
30
30
0
+10
MIN.
DC
35
30
35
+3
+13
TYP.
2:1
MAX.
4
CONDITION
3 dB bandwidth
UNITS
GHz
Ratio
45
DM0812LW2 TYPICAL TEST DATA
VSWR
(LO = +10 dBm)
3.5:1
3:1
VSWR (RATIO)
ISOLATION (dB)
2.5:1
2:1
RF
LO
ISOLATION
20
40
60
30
40
50
IF TO RF
LO TO IF
LO TO RF
7.5
8.5
9.5
10.5
11.5
12.5
1.5:1
1:1
7.5
8.5
9.5
10.5
FREQUENCY (GHz)
11.5
12.5
0
1
2
3
FREQUENCY (GHz)
4
5
0
CONVERSION LOSS (dB)
2
4
6
8
10
CONVERSION LOSS (IF = 100 MHz)
IF RESPONSE (10 GHz FIXED LO)
(LO = +10 dBm)
0
2
IF RESPONSE (dB)
SINGLE-TONE (m) RF x (n) LO RELATIVE SPUR LEVEL (dBc)
(AVERAGE MIDBAND RF, LO, IF FREQUENCIES,
RF = -10 dBm, LO = +10 dBm)
SPUR
(m) RF x (n) LO
1
1
1
2
2
2
3
3
3
x
x
x
x
x
x
x
x
x
1
2
3
1
2
3
1
2
3
RF TEST
FREQ. (GHz)
9
12.6
14
6
9.5
8.4
4.5
7.6
9.6
LO TEST
FREQ. (GHz)
11
7.3
5.5
14
10.5
11.6
15.5
12.4
10.3
SPUR
LEVEL (dBc)
0
27
15
50
65
60
53
> 65
60
CONVERSION LOSS
4
6
8
10
12.5
IF RESPONSE
7.5
8.5
9.5
10.5
FREQUENCY (GHz)
11.5
MAXIMUM RATINGS
Specifications taken at .......................... +25°C
Operating temperature .......................... -54 to +85°C
Storage temperature ............................ -65 to +125°C
AVAILABLE OPTIONS
Medium/high dynamic range options
M (LO = +16 dBm), (IP
3
= +15 dBm typ.)
H (LO = +20 dBm), (IP
3
= +22 dBm typ.)
OUTLINE DRAWING
.800
.295
.590
L
I
R
.450
.070
.070 DIA. THRU MTG.
HOLES (4 PLACES)
.145
.510
TYPE SMA FIELD REPLACEABLE
FEMALE CONNECTOR (TYP. 3 PLACES)
.280
.380
TYP.
.185
OPTIONAL SPACER PLATE
.400
46
Microcontroller MCU
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