MA4TD0886TR datasheet, PDF - EEWORLD Datasheet

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MA4TD0886TR: Description500MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SMT, 4 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size101KB，4 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com

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MA4TD0886TR Overview

500MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SMT, 4 PIN

MA4TD0886TR Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	17 dB
Maximum input power (CW)	20 dBm
Maximum operating frequency	2000 MHz
Minimum operating frequency	500 MHz
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2
Base Number Matches	1

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Silicon Bipolar MMIC

Cascadable Ampliﬁer

Features

MA4TD0885, MA4TD0886

V3.00

Case Style 85

GROUND

Cascadable 50Ω Gain Block

High Gain: 32.5 dB Typical @ 0.1 GHz

18.0 dB Typical @ 1.0 GHz

Low Noise Figure: 3.3 dB Typical @ 1.0 GHz

Unconditionally Stable (k>1)

Low Cost Plastic and SMT Packages

Tape and Reel Packaging Available

.085

2.16

RF INPUT

RF OUTPUT

AND BIAS

.020

0.51

GROUND

Description

M/A-COM’s MA4TD0885 and MA4TD0886 are high per-

formance silicon bipolar MMIC Cascadable Amplifiers

housed in low cost plastic packages. The MA4TD0885

and MA4TD0886 are designed for use where a general

purpose 50Ω gain block with high gain and low noise

ﬁgure is required. Typical applications include narrow

and wide band IF and RF amplifiers in industrial and

commercial applications. The MA4TD0886 is designed

for surface mount usage and is normally supplied on

tape and reel.

The MA4TD0885 and MA4TD0886 chip is fabricated

using a 10 GHz f

silicon bipolar technology that fea-

tures gold metalization and IC passivation for increased

performance and reliability.

TYPICAL POWER GAIN vs FREQUENCY

.060

.010

1.52

0.25

.500

.030

12.7

0.76

.060

.010

1.52

0.25

.020

0.51

.008

.002

0.2

0.05

Case Style 86

GROUND

RF OUTPUT

AND BIAS

GROUND

.085

2.16

RF INPUT

.020

0.51

.205

.030

5.21

0.76

.008

.002

0.2

0.05

Id = 36 mA

GAIN (dB)

.026

0.66

0.1

(unless otherwise speciﬁed)

Dimensions are in/mm

Tolerance: in .xxx = ±.005; mm .xx = ±.13

Not to scale

Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

2,3

RF Input Power

Junction Temperature

Storage Temperature

Ratings

65 mA

500 mW

+20 dBm

150°C

-65°C to +150°C

FREQUENCY (GHz)

Pin Conﬁguration

Pin Number

2&4

Pin Description

RF Input

AC/DC Ground

RF Output and DC Bias

Thermal Resistance: =

= 140°C/W

1. Exceeding these limits may cause permanent damage.

2. Case Temperature (T

) = 25°C.

3. Derate at 7.1 mW/°C for T

> 80°C.

Speciﬁcations Subject to Change Without Notice.

North America:

Tel. (800) 366-2266

Fax (800) 618-8883

M/A-COM, Inc.

Asia/Paciﬁc: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

MA4TD0886TR Related Products

	MA4TD0886TR	MA4TD0885PIN	MA4TD0886PIN
Description	500MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SMT, 4 PIN	500MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SMT, 4 PIN	500MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SMT, 4 PIN
Reach Compliance Code	unknown	unknown	unknown
Characteristic impedance	50 Ω	50 Ω	50 Ω
structure	COMPONENT	COMPONENT	COMPONENT
Gain	17 dB	17 dB	17 dB
Maximum input power (CW)	20 dBm	20 dBm	20 dBm
Maximum operating frequency	2000 MHz	2000 MHz	2000 MHz
Minimum operating frequency	500 MHz	500 MHz	500 MHz
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2
Base Number Matches	1	1	1

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