ZXTN25040DFH
40V, SOT23, NPN medium power transistor
Summary
BV
CEX
> 130V
BV
CEO
> 40V
BV
ECO
> 6V
I
C(cont)
= 4A
V
CE(sat)
< 55 mV @ 1A
R
CE(sat)
= 35 m
P
D
= 1.25W
Complementary part number ZXTP25040DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
•
•
High power dissipation SOT23 package
High peak current
High gain
Low saturation voltage
130V forward blocking voltage
6V reverse blocking voltage
E
E
C
B
Pinout - top view
Applications
•
•
•
•
•
MOSFET gate drivers
Power switches
Motor control
DC fans
DC-DC converters
Ordering information
Device
ZXTN25040DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per
reel
3,000
Device marking
1A4
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
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ZXTN25040DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Base current
Peak pulse current
Power dissipation at T
amb
= 25°C
(a)
Linear derating factor
Power dissipation at T
amb
= 25°C
(b)
Linear derating factor
Power dissipation at T
amb
= 25°C
(c)
Linear derating factor
Power dissipation at T
amb
= 25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
P
Limit
130
130
40
6
7
4
1
10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTN25040DFH
Characteristics
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTN25040DFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Symbol
BV
CBO
Min.
130
130
40
7
6
6
Typ.
170
170
63
8.3
7.4
7.4
<1
-
50
20
100
Max.
Unit
V
V
V
V
V
V
nA
A
nA
Conditions
I
C
= 100 A
I
C
= 100 A; R
BE
< 1k
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
I
E
= 100 A
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
V
CB
= 100V
V
CB
= 100V, T
amb
= 100°C
V
CE
= 100V; R
BE
< 1k
or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 10A, V
CE
= 2V
(*)
MHz
20
pF
ns
ns
ns
ns
2%.
Collector-emitter breakdown BV
CEX
voltage (forward blocking)
Collector-emitter breakdown BV
CEO
voltage (base open)
Emitter-base breakdown
voltage
BV
EBO
or
Emitter-collector breakdown BV
ECX
voltage (reverse blocking)
Emitter-collector breakdown BV
ECO
voltage (base open)
Collector-base cut-off current I
CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
CEX
I
EBO
V
CE(sat)
<1
45
120
135
140
50
55
210
210
190
1050
950
900
nA
mV
mV
mV
mV
mV
mV
Base-emitter saturation
voltage
V
BE(sat)
960
840
300
300
30
450
450
60
10
Base-emitter turn-on voltage V
BE(on)
Static forward current
transfer ratio
h
FE
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
190
11.7
64
108
428
130
300 s; duty cycle
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
(*)
V
CC
= 10V,
I
C
= 1A,
I
B1
= I
B2
= 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTN25040DFH
Typical characteristics
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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