EEWORLDEEWORLDEEWORLD

Part Number

Search

D711N60T

Description
Rectifier Diode, 1 Phase, 1 Element, 1050A, 6000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size199KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

D711N60T Online Shopping

Suppliers Part Number Price MOQ In stock  
D711N60T - - View Buy Now

D711N60T Overview

Rectifier Diode, 1 Phase, 1 Element, 1050A, 6000V V(RRM), Silicon,

D711N60T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current8500 A
Number of components1
Phase1
Number of terminals2
Maximum output current1050 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D 711N
T
vj
= -40°C... T
v j max
V
RRM
Elektrisch e Eig enschaften / Electrical properties
Höchstzul ässige Werte / M aximum rated val ues
Periodische Rüc kwärts-Spitzensperrspannung
Kenndaten
repetiti ve peak reverse voltages
Periodische Rüc kwärts-Spitzensperrspannung
repetiti ve peak reverse voltages
Durchlaßstrom-Grenzeffekti vwert
maxi mum RMS on-state current
Dauergrenzstrom
average on-state c urrent
Stoßstrom-Grenz wert
surge current
Grenzlastintegral
I²t-value
Spitzensperrverlustl eistung
Surge reverse power dissipation
T
C
= 100 °C
T
C
= 60 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 20 µs
T
vj
= T
vj max
, t
P
= 20 µs
Elektrische
T
Eigenschaften
= 0°C... T
vj
v j max
5800
6500
6000
6700
6000 V
6800 V
6200 V
7000 V
1670 A
790 A
1060 A
12500 A
10500 A
780 10³ A²s
550 10³ A²s
80 10³ W
90 10³ W
V
RRM
I
FRMSM
I
FAVM
I
FSM
I²t
P
RSM
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleus ens pannung
threshold voltage
Ersatzwi derstand
slope resistanc e
Durchlaßkennlinie
on-state c haracteristic
v
=
A
+
B
i
T
vj
= T
vj max
, i
F
= 1200 A
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
typ.
A
B
C
D
A
B
C
D
typ.
max.
typ.
max.
typ.
max.
1,77 V
1,9 V
0,79 V
0,84 V
0,81 mΩ
0,87 mΩ
400A
i
F
1200A
T
vj
= T
vj max
F
T
+
C
Ln
(
i
T
+
1)
+
D
i
T
max.
Rückwärts-Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
0,7
0,000438
-0,038
0,0234
0,749
0,000496
-0,04065
0,025
max.
50 mA
prepar ed by: C. Schneider
approved by: J. Przybilla
date of publication:
revision:
1.12.04
5
BIP AC / SM PB 2003-05-27, Schneider / Keller
Seite/page
1/8

D711N60T Related Products

D711N60T D711N65T D711N67T D711N62T D711N58T
Description Rectifier Diode, 1 Phase, 1 Element, 1050A, 6000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1050A, 6500V V(RRM), Silicon, Rectifier Diode, 1 Element, 1060A, 6700V V(RRM), Rectifier Diode, 1 Element, 1060A, 6200V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 1050A, 5800V V(RRM), Silicon,
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Maximum non-repetitive peak forward current 8500 A 8500 A 12500 A 12500 A 8500 A
Number of components 1 1 1 1 1
Maximum output current 1050 A 1050 A 1060 A 1060 A 1050 A
Maximum repetitive peak reverse voltage 6000 V 6500 V 6700 V 6200 V 5800 V
Is it Rohs certified? conform to conform to conform to conform to -
application GENERAL PURPOSE GENERAL PURPOSE - - GENERAL PURPOSE
Diode component materials SILICON SILICON - - SILICON
JESD-30 code O-CEDB-N2 O-CEDB-N2 - - O-CEDB-N2
Phase 1 1 - - 1
Number of terminals 2 2 - - 2
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - - CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND - - ROUND
Package form DISK BUTTON DISK BUTTON - - DISK BUTTON
Certification status Not Qualified Not Qualified - - Not Qualified
surface mount YES YES - - YES
Terminal form NO LEAD NO LEAD - - NO LEAD
Terminal location END END - - END
Base Number Matches 1 1 1 1 -
Maximum operating temperature - 160 °C 160 °C 160 °C 160 °C

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 148  719  2000  2715  1693  3  15  41  55  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号