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LEE-29+

Description
Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, 1 Func, ROHS COMPLIANT, CASE FG873, 4 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size208KB,2 Pages
ManufacturerMini-Circuits
Websitehttps://www.minicircuits.com
Environmental Compliance  
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LEE-29+ Overview

Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, 1 Func, ROHS COMPLIANT, CASE FG873, 4 PIN

LEE-29+ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionMODULE,4LEAD(UNSPEC)
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUSABLE TO 10 GHZ
Characteristic impedance50 Ω
structureCOMPONENT
Gain13.3 dB
Maximum input power (CW)15 dBm
JESD-609 codee2
Number of functions1
Number of terminals4
Maximum operating frequency8000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeMODULE,4LEAD(UNSPEC)
power supply3.6 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceTin/Silver (Sn/Ag) - with Nickel (Ni) barrier
Maximum voltage standing wave ratio1.6
Base Number Matches1
Surface Mount
Monolithic Amplifiers
50Ω, Broadband,
Features
frequency range, DC to 8 GHz, useable to 10 GHz
up to 17.3 dBm typ. output power
excellent package for heat dissipation, exposed metal bottom
flat output power to 10 GHz (LEE-19+,-29+,-39+)
LEE+ SERIES
DC to 8 GHz
CASE STYLE : FG873
Applications
cellular
PCS
communication receivers & transmitters
satellite communication, military
GAIN, dB Typical
MAXIMUM
DYNAMIC
POWER, dBm RANGE
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +suffix has been added in order to identify RoHS
Compliance. There has been no change to the model's
material, form, fit, or function. See our web site for RoHS
Compliance methodologies and qualifications.
Electrical Specifications @ 25°C
MODEL FREQ.
s
(GHz)
NO.
VSWR
(:1)
Typ.
Out
DC-3 3-f
U
GHz GHz
1.4
1.3
1.3
1.4
1.5
1.8
1.6
1.6
1.4
1.6
f
L
- f
U
LEE-19+
LEE-29+
LEE-39+
LEE-49+
LEE-59+
s
0.1
12.1
15.5
21.9
DC-8
DC-8
DC-8
DC-5
DC-5
over frequency, GHz
1
2
4
5
8
10
Low Power
12.0 12.1 12.0 11.6 10.6 9.0
15.4 15.4 14.9 14.1 12.5 10.6
21.4 20.8 18.3 16.6 13.5 10.5
Min. @
2GHz
9.6
13.3
18.5
12.0
17.8
Output
Input NF IP3
In
(1dB Comp.) (no
dB dBm DC-3 3-f
U
2 GHz f
U
dmg.) Typ. Typ. GHz GHz
10.2 11.3
10.9 11.3
10.4 11.3
16.4 10.8
17.3 11.7
15
15
13
15
13
6.5
5.5
4.5
5.5
4.5
24.5
25.5
23.4
33
33
1.5
1.4
1.3
1.6
1.5
1.2
1.3
1.4
1.2
1.5
MAXIMUM DC OPERATING THERMAL PRICE
RESIS-
CURRENT
POWER
$
TANCE
@Pin 3
RATING
3
(note 4)
θjc,
I
mA
55
55
55
85
85
Cur-
Device
rent
Volt
(mA) Typ Min Max
40
40
35
65
65
3.6 3.2 4.0
3.6 3.2 4.0
3.5 3.1 3.9
4.9 4.5 5.3
4.8 4.3 5.2
typ.
°C/W
322
334
321
229
244
Qty.
(25)
1.19
1.19
1.19
1.79
1.79
Medium Power
14.0 13.9 14.3 14.0 13.1 7.8 —
20.6 20.3 19.7 15.8 13.8 7.6 —
Low frequency cutoff determined by external coupling capacitors.
f
U
is the upper frequency limit for each model as shown in the table.
3 Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
4. Supply voltage must be connected to pin 3 through a bias resistor in order to
prevent damage. See "Biasing MMIC Amplifiers" in minicircuits.com/
application.html. Reliability predictions are applicable at specified current &
normal operating conditions.
Maximum Ratings
Operating Temperature
Storage Temperature
-45°C to 85°C
-65°C to 150°C
MTTF vs. Junction Temp.
(LEE+ SERIES)
1,000
MTTF (Years)
100
Pin Configuration
RF IN
RF OUT
DC
GND EXT.
DEMO BOARD
1
3
3
2,4
LEE-TB
10
1
140
160
180
Junction Temp (˚C)
( C)
200
220
Model Identification
Model
LEE-19+
LEE-29+
LEE-39+
LEE-49+
LEE-59+
Marking
19
29
39
49
59
designers kits available
KIT
No.
K1-LEE
No. of
Units in KIT
50
Description
Price $
per KIT
Kit includes 1 test board plus
99.95
10 of each: LEE-19+,-29+,-39+,-49+,-59+
Prefix letter (optional) designates assembly location.
Suffix letters (optional) are for wafer identification.
Mini-Circuits
®
INTERNET
http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
REV. E
M98898
LEE-19+ ED-10757/1
LEE-29+ ED-10757/2
LEE-39+ ED-10757/3
LEE-49+ ED-10757/4
LEE-59+ ED-10757/5
RS/YB/LC
031210
Page 1 of 2
Distribution Centers
NORTH AMERICA 800-654-7949 • 417-335-5935 • Fax 417-335-5945 • EUROPE 44-1252-832600 • Fax 44-1252-837010
Mini-Circuits
ISO 9001 & ISO 14001
Certified

LEE-29+ Related Products

LEE-29+ LEE-59+ LEE-19+ LEE-49+
Description Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, 1 Func, ROHS COMPLIANT, CASE FG873, 4 PIN Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, 1 Func, ROHS COMPLIANT, CASE FG873, 4 PIN Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, 1 Func, BIPolar, ROHS COMPLIANT, CASE FG873, 4 PIN Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, 1 Func, ROHS COMPLIANT, CASE FG873, 4 PIN
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code unknown unknown compliant unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features USABLE TO 10 GHZ USABLE TO 10 GHZ USABLE TO 10 GHZ USABLE TO 10 GHZ
Characteristic impedance 50 Ω 50 Ω 50 Ω 50 Ω
structure COMPONENT COMPONENT COMPONENT COMPONENT
Gain 13.3 dB 17.8 dB 9.6 dB 12 dB
Maximum input power (CW) 15 dBm 13 dBm 15 dBm 15 dBm
JESD-609 code e2 e2 e2 e2
Number of functions 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating frequency 8000 MHz 5000 MHz 8000 MHz 5000 MHz
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code MODULE,4LEAD(UNSPEC) MODULE,4LEAD(UNSPEC) LCC4(UNSPEC) MODULE,4LEAD(UNSPEC)
power supply 3.6 V 4.8 V 3.6 V 4.9 V
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
Terminal surface Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier Tin/Silver/Nickel (Sn/Ag/Ni) Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier Tin/Silver/Nickel (Sn/Ag/Ni)
Maximum voltage standing wave ratio 1.6 1.6 1.8 1.4
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