BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
•
High DC Current Gain
−
•
•
•
•
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector Emitter Sustaining Voltage
−
@ 100 mAdc
V
CEO(sus)
= 80 Vdc (Min)
−
BDX53B, 54B
V
CEO(sus)
= 100 Vdc (Min)
−
BDX53C, 54C
Low Collector−Emitter Saturation Voltage
−
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc
V
CE(sat)
= 4.0 Vdc (Max) @ I
C
= 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
Value
80
100
80
100
5.0
8.0
12
0.2
Unit
Vdc
Collector−Emitter Voltage
BDX53B, BDX54B
BDX53C, BDX54C
Collector−Base Voltage
BDX53B, BDX54B
BDX53C, BDX54C
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak
V
CB
Vdc
V
EB
I
C
I
B
Vdc
Adc
Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P
D
65
0.48
W
W/°C
°C
T
J
, T
stg
−65
to +150
1
TO−220AB
CASE 221A
STYLE 1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
Base
BDX5xy =
3
Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJA
R
qJC
Max
70
Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
°C/W
°C/W
2
Collector
1.92
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 14
1
Publication Order Number:
BDX53B/D
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Î
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Î
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1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 1)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Small−Signal Current Gain
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz)
Base−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
C
= 12 mA)
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 12 mAdc)
DC Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc)
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 50 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0)
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Characteristic
PD, POWER DISSIPATION (WATTS)
1.0
2.0
3.0
T
A
4.0
20
40
60
T
C
80
0
0
20
http://onsemi.com
40
Figure 1. Power Derating
T
A
T, TEMPERATURE (°C)
60
2
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
T
C
BDX53B, 53C
BDX54B, 54C
80
100
120
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
I
CBO
I
CEO
C
ob
h
FE
h
fe
140
160
Min
80
100
750
4.0
−
−
−
−
−
−
−
−
−
Max
300
200
2.5
2.0
4.0
0.2
0.2
0.5
0.5
−
−
−
−
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
pF
−
−
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
[
100 mA
MSD6100 USED BELOW I
B
[
100 mA
TUT
R
B
V
2
APPROX
V
CC
- 30 V
R
C
5.0
3.0
2.0
SCOPE
t, TIME (
μ
s)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
t
r
t
f
t
s
+ 8.0 V
0
V
1
APPROX
51
D
1
+ 4.0 V
[
8.0 k
[
120
25
ms
-12 V
t
r
, t
f
v
10 ns
DUTY CYCLE = 1.0%
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
For NPN test circuit reverse all polarities
t
d
@ V
BE(off)
= 0 V
0.5 0.7 1.0
2.0 3.0
0.3
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 2. Switching Time Test Circuit
Figure 3. Switching Times
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.02
R
qJC
(t) = r(t) R
qJC
R
qJC
= 1.92°C/W
t
1
t
2
SINGLE
PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
50
100
200 300
500
1000
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
Figure 4. Thermal Response
20
IC, COLLECTOR CURRENT (AMP)
10
5.0
2.0
1.0
0.5
0.2
0.1
5.0 ms
1.0 ms
100
ms
500
ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
BDX53B, BDX54B
BDX53C, BDX54C
20 30
2.0 3.0
5.0 7.0 10
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
0.05
0.02
1.0
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
t
150
°
C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active−Region Safe Operating Area
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3
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
10,000
hFE, SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
C, CAPACITANCE (pF)
300
T
J
= + 25°C
200
T
J
= 25°C
V
CE
= 3.0 V
I
C
= 3.0 A
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500
1000
100
70
50
PNP
NPN
30
0.1
0.2
C
ib
C
ob
0.5
1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Small-Signal Current Gain
Figure 7. Capacitance
NPN
BDX53B, 53C
20,000
V
CE
= 4.0 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
- 55°C
500
300
200
0.1
T
J
= 150°C
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
0.1
- 55°C
25°C
T
J
= 150°C
20,000
PNP
BDX54B, 54C
V
CE
= 4.0 V
25°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
I
B
, BASE CURRENT (mA)
10
20
30
Figure 9. Collector Saturation Region
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4
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
3.0
T
J
= 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.5
3.0
T
J
= 25°C
2.0
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4.0 V
1.0
V
CE(sat)
@ I
C
/I
B
= 250
2.0
1.5
1.5
V
BE
@ V
CE
= 4.0 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
1.0
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
NPN
BDX53B, BDX53C
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
+ 4.0
+ 3.0
+ 2.0
+ 1.0
0
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
0.1
0.2 0.3
0.5 0.7 1.0
q
VB
for V
BE
*q
VC
for V
CE(sat)
25°C to 150°C
- 55 to 150°C
2.0 3.0
5.0
7.0 10
- 55°C to 25°C
25°C to 150°C
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
+ 5.0
*I
C
/I
B
v
h
FE/3
+ 5.0
+ 4.0
+ 3.0
+ 2.0
+ 1.0
0
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
0.1
0.2 0.3
q
VB
for V
BE
PNP
BDX54B, BDX54C
*I
C
/I
B
v
h
FE/3
25°C to 150°C
- 55°C to 25°C
*q
VC
for V
CE(sat)
25°C to 150°C
- 55 to 150°C
0.5 0.7 1.0
2.0 3.0
5.0
7.0 10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
10
5
IC, COLLECTOR CURRENT (
μ
A)
IC, COLLECTOR CURRENT (
μ
A)
10
4
10
3
10
2
T
J
= 150°C
10
1
10
0
100°C
REVERSE
V
CE
= 30 V
FORWARD
10
5
10
4
10
3
10
2
10
1
10
0
T
J
= 150°C
100°C
25°C
0
- 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4
REVERSE
V
CE
= 30 V
FORWARD
25°C
10
- 1
- 0.6 - 0.4 - 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
10
- 1
+ 0.6 + 0.4 + 0.2
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
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