Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BCX70G
THRU
BCX70K
NPN Small
Signal Transistor
250mW
SOT-23
A
D
Features
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Low Current, Low Voltage
l
For Switching and AF Amplifier applications.
l
Suited for low level, low noise, low frequency
Applications in hybrid circuits
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
C
B
l
Weight: 0.008 grams ( approx.)
l
Marking Code:
F
E
P/N
BCX70G
BCX70H
Marking
AG
AH
P/N
BCX70J
BCX70K
Marking
AJ
AK
G
H
J
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current(DC)
Power Dissipation@T
s
=79
o
C
Thermal Resistance, Junction to
Ambient Air
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
d
R
θJA
K
DIMENSIONS
Value
45
45
5
200
50
250
500
(1)
Unit
V
V
V
mA
mA
mW
o
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
C/W
o
T
j
, T
STG
-55~150
C
Notes:
(1) Mounted on FR-4 printed-circuit board
.037
.950
.037
.950
www.cnelectr.com
BCX70 Series
Electrical Characteristics
(T
Parameter
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 1 V, I
C
= 50 mA
V
CB
= 45 V, V
BE
= 0 V
V
CB
= 45 V, V
BE
= 0 V
T
A
= 150°C
V
EB
= 4 V, I
C
= 0
V
CE
= 5 V, I
C
= 10 mA
f = 100 MHz
V
CB
= 10 V, f = 1 MHz, I
E
= 0
V
EB
= 0.5 V, f = 1 MHz, I
C
= 0
V
CE
= 5 V, I
C
= 200
µA,
R
S
= 2 kΩ, f = 1 kHz,
B = 200 Hz
V
CE
= 5 V, I
C
= 2 mA,
f = 1.0 kHZ
V
CC
= 10 V, I
C
= 10 mA,
I
B(on) =
-I
B(off)
= 1 mA
V
CC
= 10 V, I
C
= 10 mA,
I
B(on) =
-I
B(off)
= 1 mA
Min
—
30
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
—
—
—
—
—
100
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
650
520
780
—
—
—
250
2.5
8
2
200
260
330
520
85
480
Max
—
—
—
—
220
310
460
630
—
—
—
—
350
550
850
1050
750
—
—
20
20
20
—
—
—
6
Unit
DC Current Gain
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CEsat
V
BEsat
mV
mV
Base-Emitter Voltage
V
BE
mV
nA
µA
nA
MHz
pF
pF
dB
Collector Cut-off Current
Emitter Cut-off Current
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
BCX70G
BCX70H
BCX70J
BCX70K
I
CBO
I
EBO
f
T
C
CBO
C
EBO
F
Small Signal Current Gain
h
fe
Turn-on Time at R
L
= 990Ω (see fig. 1)
Turn-off Time at R
L
= 990Ω (see fig. 1)
t
on
t
off
150
800
ns
ns
www.cnelectr.com
Talking about work
京公网安备 11010802033920号
EEWORLD
