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BC559CRLRM

Description
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size135KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC559CRLRM Overview

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC559CRLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-04
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)380
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
ON Semiconductort
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC559
–30
–30
–5.0
–100
625
5.0
1.5
12
–55 to +150
BC560
–45
–50
Unit
Vdc
Vdc
Vdc
mAdc
BC559B, C
BC560C
1
mW
mW/°C
Watt
mW/°C
°C
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= –30 Vdc, I
E
= 0)
(V
CB
= –30 Vdc, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
= –4.0 Vdc, I
C
= 0)
V
(BR)CEO
BC559
BC560
V
(BR)CBO
BC559
BC560
V
(BR)EBO
I
CBO
I
EBO
–15
–5.0
–15
nAdc
µAdc
nAdc
–30
–50
–5.0
Vdc
–30
–45
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
255
September, 2001 – Rev. 0
Publication Order Number:
BC559B/D
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