KTC8550D datasheet, PDF - EEWORLD Datasheet

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KTC8550D: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size349KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC8550D Overview

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

KTC8550D Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURE

・Complementary

to KTC8050.

KTC8550

EPITAXIAL PLANAR PNP TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

RATING

-35

-30

-5

-800

800

625

150

-55½150

UNIT

℃

DIM

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

DC Current Gain

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

(1) Classification

C : 100½200,

CE(sat)

D : 150½300

=-1V, I

=-350mA

=-500mA, I

=-50mA

=-1V, I

=-500mA

=-5V, I

=-10mA

=-10V, f=1MHz, I

120

-0.5

-1.2

MHz

SYMBOL

CBO

(BR)CBO

(BR)CEO

(1) (Note)

TEST CONDITION

=-15V, I

=-0.5mA, I

=-1mA, I

=-1V, I

=-50mA

MIN.

-35

-30

100

TYP.

MAX.

-50

300

UNIT

2011. 4. 4

Revision No : 5

1/2

KTC8550D Related Products

	KTC8550D	KTC8550C
Description	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	100
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.625 W	0.625 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz

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