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6PHR100

Description
Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric Compare View All

6PHR100 Overview

Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon

6PHR100 Parametric

Parameter NameAttribute value
package instructionR-PSFM-W4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PSFM-W4
Maximum non-repetitive peak forward current240 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Base Number Matches1
6PHR
FAST RECOVERY
SINGLE-PHASE FULL WAVE BRIDGE
6 AMPERES
FOR P.C. BOARD AND HEAT SINK MOUNTING
200 NANOSECOND FAST RECOVERY
nent
r the compo
nition unde
g
dicates reco
s, inc.
This mark in derwriters Laboratorie
Un
program of
PRV/Leg
Type No.
50V
6PHR05
100V
6PHR10
200V
6PHR20
400V
6PHR40
600V
6PHR60
800V
6PHR80
1000V
6PHR100
ELECTRICAL CHARACTERISTICS PER LEG
(at T
A
=25 C Unl es s Oth erw ise Spe ci fie d)
Average Output Current, Io @ 65 C Tc (Fig.1)
Max.Forward Voltage Drop,
V
F
=1.2V @ I
F
=
Max.DC Reverse Current @ PRV and 25
C
, I
R
Max.DC Reverse Current @ PRV and 100
C
,I
R
Max.Peak Surge Current, l
FSM
(8.3ms) (Fig.2)
Max. Reverse Recovery Time, Trr (Fig.3)
Ambient Operating Temperature Range,T
A
Storage Temperature Range,T
STG
O
6
2.5
10
300
240
200
-55 to+150
-55 to+150
Amp
Amp
A
A
Amp
Nanosec
o
C
o
C
EDI reserves the right to change these specifications at any time without notice.

6PHR100 Related Products

6PHR100 6PHR20 6PHR40
Description Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 400V V(RRM), Silicon
package instruction R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Reach Compliance Code unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
JESD-30 code R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Maximum non-repetitive peak forward current 240 A 240 A 240 A
Number of components 4 4 4
Phase 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 200 V 400 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
Base Number Matches 1 1 1
Maker - EDI [Electronic devices inc.] EDI [Electronic devices inc.]

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