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PXT8550-D3-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size329KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

PXT8550-D3-TP-HF Overview

Small Signal Bipolar Transistor,

PXT8550-D3-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Maximum time at peak reflow temperature10
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
PXT8550-B
PXT8550-C
PXT8550-D
PXT8550-D3
PNP Silicon
Plastic-Encapsulate

Transistor










































Features
Halogen
free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:Y2/8550
Capable of 0.5Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Parameter
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=-20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
DC Current Gain
(I
C
=-800mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-800mAdc, I
B
=-80mAdc)
Base-Emitter Saturation Voltage
(I
C
=-800mAdc, I
B
=-80mAdc)
Base- Emitter
Positive Favor
Voltage
(I
B
=-1.0Adc)
Transistor Frequency
(I
C
=-50mAdc, V
CE
=-10Vdc,)
Output Capacitance
(I
E
=0,V
CB
=-10Vdc,f=1MHz)
Min
-40
-25
-5.0
---
---
---
Max
---
---
---
-0.1
-0.1
-0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
SOT-89
A
B
K
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
E
C
D
G
H
J
F
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BEF
85
40
---
---
---
400
---
-0.5
-1.2
-1.55
---
---
Vdc
Vdc
Vdc
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
SMALL-SIGNAL CHARACTERISTICS
f
T
C
ob
100
---
---
15
MHz
pF











CLASSIFICATION OF H
FE (1)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400

 


 

 




1.55

.061




25

































REF.








www.mccsemi.com
Revision:
A
1 of 2
2015/03/13

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Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli
Humidity sensitivity level 1 1 1 1
Peak Reflow Temperature (Celsius) 260 260 260 260
Maximum time at peak reflow temperature 10 10 10 10
Base Number Matches 1 1 1 1
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