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BLF7G22LS-130,118

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size1MB,15 Pages
ManufacturerAmpleon
Websitehttp://www.ampleon.com/
Environmental Compliance

Ampleon was founded in 2015, but has been leading the industry in RF power for more than 50 years. Looking to the future, the company hopes to make the world a better place by innovating with advanced LDMOS and GaN technologies in high-frequency applications. With more than 1,600 employees worldwide, Ampleon is committed to enabling its customers to successfully use its RF power products through close collaboration and partnerships, innovative capabilities and excellent execution. Its consistent and innovative product portfolio brings best-in-class products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defense applications.

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BLF7G22LS-130,118 Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

BLF7G22LS-130,118 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLATPACK, R-CDFP-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)28 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

BLF7G22LS-130,118 Preview

Download Datasheet
BLF7G22L-130;
BLF7G22LS-130
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
[1]
[2]
f
(MHz)
2110 to 2170
2110 to 2170
I
Dq
(mA)
950
950
V
DS
(V)
28
28
P
L(AV)
(W)
30
33
G
p
(dB)
18.5
18.5
D
(%)
32
33
ACPR
(dBc)
32
[1]
39
[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
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