BLF7G22LS-250P datasheet, PDF - EEWORLD Datasheet

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BLF7G22LS-250P: Description65V, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CEARMIC PACKAGE- 4; CategoryDiscrete semiconductor The transistor; File Size985KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF7G22LS-250P Overview

65V, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CEARMIC PACKAGE- 4

BLF7G22LS-250P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-CDFM-F4
Contacts	4
Reach Compliance Code	unknown
Other features	ESD PROTECTION
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CDFM-F4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLF7G22L-250P;

BLF7G22LS-250P

Power LDMOS transistor

Rev. 3 — 12 July 2013

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2170 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

2110 to 2170

(mA)

1900

(V)

L(AV)

(W)

(dB)

18.5



(%)

ACPR

(dBc)

30

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing

5 MHz.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2110 MHz to 2170 MHz frequency range

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