BLF7G27L-200PB;
BLF7G27LS-200PB
Power LDMOS transistor
Rev. 1 — 5 April 2011
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
Pulsed CW
f
(MHz)
2600 to 2700
I
Dq
(mA)
1700
V
DS
(V)
28
P
L(AV)
(W)
200
G
p
(dB)
16.5
η
D
(%)
25
ACPR
885k
(dBc)
−46
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2600 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2600 MHz to
2700 MHz frequency range
NXP Semiconductors
BLF7G27L(S)-200PB
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6, 7
8, 9
1
2
3
4
5
6, 7
8, 9
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
sense drain
sense gate
drain1
drain2
gate1
gate2
source
sense drain
sense gate
2
sym127
Simplified outline
Graphic symbol
BLF7G27L-200PB (SOT1110A)
6
1
2
7
1
6, 7
8
[1]
3
4
9
5
3
4
5
8, 9
2
sym127
BLF7G27LS-200PB (SOT1110B)
6
1
2
7
5
3
8
[1]
1
6, 7
8, 9
5
3
4
9
4
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-200PB
-
flanged LDMOST ceramic package; 2 mounting holes;
8 leads
earless flanged LDMOST ceramic package; 8 leads
Version
SOT1110A
SOT1110B
Type number
BLF7G27LS-200PB -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
48
+150
200
Unit
V
V
A
°C
°C
BLF7G27L-200PB_27LS-200PB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 5 April 2011
2 of 9
NXP Semiconductors
BLF7G27L(S)-200PB
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 80
°C;
P
L
= 200 W;
T
j
≤
150
°C
Typ
Unit
thermal resistance from junction to case
<tbd> K/W
Symbol Parameter
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C per section, unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 144 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.2 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
24
-
-
0.1
Max Unit
-
2.3
5
-
500
-
-
V
V
μA
A
nA
S
Ω
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.44 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.04 A
7. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2600 MHz; f
2
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1700 mA;
T
case
= 25
°
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
η
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
Min Typ Max Unit
-
-
-
-
-
40
-
W
dB
dB
%
dBc
16.5 -
−10
-
25
-
−45
-
7.1 Ruggedness in class-AB operation
The BLF7G27L-200PB and BLF7G27LS-200PB are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1700 mA; P
L
= 200 W (IS-95); f = 2600 MHz.
BLF7G27L-200PB_27LS-200PB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 5 April 2011
3 of 9
NXP Semiconductors
BLF7G27L(S)-200PB
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 8 leads
SOT1110A
D
A
F
L
D
1
U
1
q
H
1
6
α
1
2
7
B
C
w
2
D
c
H
U
2
Z
5
p
E
1
E
A
8
b
e
3
b
1
4
9
w
3
w
1
A
B
Q
w
3
0.25
Z
5.97
5.72
α
64°
62°
0
5
scale
10 mm
0.01
0.235 64°
0.225 62°
Dimensions
Unit
(1)
mm
A
b
1.14
0.89
b
1
c
D
D
1
e
13.72
11.56 0.10 30.94 30.96
9.30 9.27 1.50 16.10 25.27 2.41
3.05
2.01
1.4
1.615 0.395
E
E
1
F
H
H
1
L
p
3.30
Q
(2)
2.26
35.56
41.02 10.03
1.625 0.405
0.01 0.02
q
U
1
U
2
w
1
w
2
max 5.36
nom
min 3.99
11.81 0.18 31.55 31.52
9.50 9.53 1.75 17.12 25.53 2.67
41.28 10.29
0.25 0.51
0.374 0.375 0.069 0.674 1.005 0.105 0.13 0.089
max 0.211 0.045 0.465 0.007 1.242 1.241
0.540
inches nom
0.366 0.365 0.059 0.634 0.995 0.095 0.12 0.079
min 0.157 0.035 0.455 0.004 1.218 1.219
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
Outline
version
SOT1110A
References
IEC
JEDEC
JEITA
sot1110a_po
European
projection
Issue date
09-11-20
10-02-02
Fig 1.
Package outline SOT1110A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
BLF7G27L-200PB_27LS-200PB
Objective data sheet
Rev. 1 — 5 April 2011
4 of 9
NXP Semiconductors
BLF7G27L(S)-200PB
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 8 leads
SOT1110B
D
A
F
5
L
D
1
D
U
1
H
1
6
α
1
2
7
w
2
D
c
H
U
2
Z
Z
1
E
1
E
8
b
3
b
1
e
4
9
w
3
Q
Z
1
α
11.20 64°
10.95 62°
0
5
scale
Dimensions
Unit
(1)
mm
A
b
1.14
0.89
b
1
c
D
D
1
e
13.72
11.56 0.10
30.94 30.96
0.54
0.366 0.365 0.059 0.634 0.995 0.095 0.079 1.265 0.395
9.3
9.27
1.50
16.10 25.27 2.41
2.01 32.13 10.03
0.02
0.01
0.225
0.374 0.375 0.069 0.674 1.005 0.105 0.089 1.275 0.405
E
9.5
E
1
9.53
F
1.75
H
H
1
L
Q
(2)
U
1
U
2
w
2
0.51
w
3
0.25
5.72
0.235
Z
5.97
10 mm
0.441 64°
0.431 62°
max 5.36
nom
min 3.99
11.81 0.18
31.55 31.52
17.12 25.53 2.67
2.26 32.39 10.29
max 0.211 0.045 0.465 0.007 1.242 1.241
inches nom
min 0.157 0.035 0.455 0.004 1.218 1.219
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
SOT1110B
References
IEC
JEDEC
JEITA
European
projection
sot1110b_po
Issue date
09-11-20
10-02-02
Fig 2.
Package outline SOT1110B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
BLF7G27L-200PB_27LS-200PB
Objective data sheet
Rev. 1 — 5 April 2011
5 of 9
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