BLF202 datasheet, PDF - EEWORLD Datasheet

BLF202: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size81KB，16 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BLF202 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	5.7 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D175

BLF202

HF/VHF power MOS transistor

Product speciﬁcation

1999 Oct 20

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