BLF245B datasheet, PDF - EEWORLD Datasheet

BLF245B: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size94KB，16 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BLF245B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	4.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
surface mount	NO
Base Number Matches	1

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D096

BLF245B

VHF push-pull power MOS

transistor

Product speciﬁcation

Supersedes data of 1998 Jan 08

2000 Oct 17

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