BLF248 datasheet, PDF - EEWORLD Datasheet

BLF248: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size597KB，10 Pages; ManufacturerNorth American Philips Discrete Products Div

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	25 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	500 W
surface mount	NO
Base Number Matches	1

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