SRAM Card, 512KX8, 200ns, MOS
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 200 ns |
| Other features | BATTERY BACK-UP; WRITE PROTECT |
| JESD-30 code | X-XXMA-X60 |
| memory density | 4194304 bit |
| Memory IC Type | SRAM CARD |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 60 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 50 °C |
| Minimum operating temperature | |
| organize | 512KX8 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | UNSPECIFIED |
| Package shape | UNSPECIFIED |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Minimum standby current | 2.6 V |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal form | UNSPECIFIED |
| Terminal location | UNSPECIFIED |
| Base Number Matches | 1 |
| MF3512-MLDAP | MF3128-MLDAP | MF3256-MLDAP | |
|---|---|---|---|
| Description | SRAM Card, 512KX8, 200ns, MOS | SRAM Card, 128KX8, 200ns, MOS | SRAM Card, 256KX8, 200ns, MOS |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | 3A991.B.2.A | EAR99 | 3A991.B.2.A |
| Maximum access time | 200 ns | 200 ns | 200 ns |
| Other features | BATTERY BACK-UP; WRITE PROTECT | BATTERY BACK-UP; WRITE PROTECT | BATTERY BACK-UP; WRITE PROTECT |
| JESD-30 code | X-XXMA-X60 | X-XXMA-X60 | X-XXMA-X60 |
| memory density | 4194304 bit | 1048576 bit | 2097152 bit |
| Memory IC Type | SRAM CARD | SRAM CARD | SRAM CARD |
| memory width | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 60 | 60 | 60 |
| word count | 524288 words | 131072 words | 262144 words |
| character code | 512000 | 128000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 50 °C | 50 °C | 50 °C |
| organize | 512KX8 | 128KX8 | 256KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Exportable | YES | YES | YES |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Minimum standby current | 2.6 V | 2.6 V | 2.6 V |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | MOS | MOS | MOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Base Number Matches | 1 | 1 | - |
京公网安备 11010802033920号
EEWORLD
