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SFF2004GAHC0G

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size384KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

SFF2004GAHC0G Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

SFF2004GAHC0G Parametric

Parameter NameAttribute value
package instructionITO-220AB, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
SFF2004GA - SFF2008GA
Taiwan Semiconductor
CREAT BY ART
20A, 200V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
0.975
2004
GA
200
140
200
SFF
2005
GA
300
210
300
20
150
1.3
10
400
35
90
3.1
- 55 to +150
- 55 to +150
1.7
SFF
2006
GA
400
280
400
SFF
2008
GA
600
420
600
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
UNIT
Document Number: DS_D1401003
Version: E15

SFF2004GAHC0G Related Products

SFF2004GAHC0G SFF2005GAHC0G SFF2006GAHC0G SFF2008GAHC0G
Description Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
package instruction ITO-220AB, 3 PIN ITO-220AB, 3 PIN ITO-220AB, 3 PIN R-PSFM-T3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.975 V 1.3 V 1.3 V 1.7 V
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 200 V 300 V 400 V 600 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
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