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TN0606N3-GP013

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size601KB,5 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric Compare View All

TN0606N3-GP013 Overview

SMALL SIGNAL, FET

TN0606N3-GP013 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)35 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TN0606
General Description
Applications
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TN0606N3-G
TN0606N3-G P002
TN0606N3-G P003
TN0606N3-G P005
TN0606N3-G P013
TN0606N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary
Packing
1000/Bag
BV
DSS
/BV
DGS
60V
R
DS(ON)
(max)
Package Option
TO-92
I
D(ON)
(min)
V
GS(th)
(max)
1.5Ω
3.0A
3.0V
TO-92
2000/Reel
Pin Configuration
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
GATE
TO-92
Product Marking
SiTN
0 60 6
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
Typical Thermal Resistance
Package
TO-92
Doc.# DSFP-TN0606
B080813
θ
ja
132
O
C/W
Supertex inc.
www.supertex.com

TN0606N3-GP013 Related Products

TN0606N3-GP013 TN0606N3-GP014 TN0606N3-GP002 TN0606N3-GP003 TN0606N3-GP005
Description SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Maximum drain-source on-resistance 2 Ω 2 Ω 2 Ω 2 Ω 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 35 pF 35 pF 35 pF 35 pF 35 pF
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1
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