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BSTN47C66F

Description
Silicon Controlled Rectifier, 710000mA I(T), 1000V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size76KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSTN47C66F Overview

Silicon Controlled Rectifier, 710000mA I(T), 1000V V(DRM),

BSTN47C66F Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal circuit commutation break time15 µs
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current250 mA
Maximum leakage current40 mA
On-state non-repetitive peak current5200 A
Maximum on-state current710000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
Base Number Matches1
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