W9812G2GB
1M
×
4 BANKS
×
32BITS SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION .............................................................................................................. 3
FEATURES...................................................................................................................................... 3
AVAILABLE PART NUMBER .......................................................................................................... 3
BALL CONFIGURATION................................................................................................................. 4
PIN DESCRIPTION ......................................................................................................................... 5
BLOCK DIAGRAM........................................................................................................................... 6
FUNCTIONAL DESCRIPTION ........................................................................................................ 7
7.1.
7.2.
7.3.
7.4.
7.5.
7.6.
7.7.
7.8.
7.9.
7.10.
7.11.
7.12.
7.13.
7.14.
7.15.
7.16.
7.17.
7.18.
7.19.
7.20.
8.
9.
Power Up and Initialization ................................................................................................. 7
Programming Mode Register .............................................................................................. 7
Bank Activate Command .................................................................................................... 7
Read and Write Access Modes .......................................................................................... 7
Burst Read Command ........................................................................................................ 8
Burst Write Command......................................................................................................... 8
Read Interrupted by a Read ............................................................................................... 8
Read Interrupted by a Write................................................................................................ 8
Write Interrupted by a Write ................................................................................................ 8
Write Interrupted by a Read................................................................................................ 8
Burst Stop Command.......................................................................................................... 9
Addressing Sequence of Sequential Mode......................................................................... 9
Addressing Sequence of Interleave Mode.......................................................................... 9
Auto-precharge Command................................................................................................ 10
Precharge Command........................................................................................................ 10
Self Refresh Command..................................................................................................... 10
Power Down Mode............................................................................................................ 11
No Operation Command ................................................................................................... 11
Deselect Command .......................................................................................................... 11
Clock Suspend Mode........................................................................................................ 11
OPERATION MODE...................................................................................................................... 12
ELECTRICAL CHARACTERISTICS ............................................................................................. 13
9.1.
9.2.
9.3.
9.4.
Absolute Maximum Ratings .............................................................................................. 13
Recommended DC Operating Conditions ........................................................................ 13
Capacitance ...................................................................................................................... 13
DC Characteristics ............................................................................................................ 14
Publication Release Date: Aug. 13,2007
Revision A07
-1-
W9812G2GB
9.5.
10.1.
10.2.
10.3.
10.4.
11.1.
11.2.
11.3.
11.4.
11.5.
11.6.
11.7.
11.8.
11.9.
AC Characteristics and Operating Condition .................................................................... 15
Command Input Timing..................................................................................................... 17
Read Timing...................................................................................................................... 18
Control Timing of Input/Output Data ................................................................................. 19
Mode Register Set Cycle .................................................................................................. 20
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) .......................................... 21
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ............... 22
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) .......................................... 23
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ............... 24
Interleaved Bank Write (Burst Length = 8) ....................................................................... 25
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ............................................ 26
Page Mode Read (Burst Length = 4, CAS Latency = 3)................................................... 27
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ....................................... 28
Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ............................................ 29
10. TIMING WAVEFORMS.................................................................................................................. 17
11. OPERATING TIMING EXAMPLE.................................................................................................. 21
11.10. Auto-precharge Write (Burst Length = 4).......................................................................... 30
11.11. Auto Refresh Cycle ........................................................................................................... 31
11.12. Self Refresh Cycle ............................................................................................................ 32
11.13. Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ................................. 33
11.14. Power Down Mode............................................................................................................ 34
11.15. Auto-precharge Timing (Read Cycle) ............................................................................... 35
11.16. Auto-precharge Timing (Write Cycle) ............................................................................... 36
11.17. Timing Chart of Read to Write Cycle ................................................................................ 37
11.18. Timing Chart of Write to Read Cycle ................................................................................ 37
11.19. Timing Chart of Burst Stop Cycle (Burst Stop Command) ............................................... 38
11.20. Timing Chart of Burst Stop Cycle (Precharge Command)................................................ 38
11.21. CKE/DQM Input Timing (Write Cycle) .............................................................................. 39
11.22. CKE/DQM Input Timing (Read Cycle) .............................................................................. 40
12. PACKAGE SPECIFICATION......................................................................................................... 41
12.1.
TFBGA 90 Balls pitch=0.8mm .......................................................................................... 41
13. REVISION HISTORY..................................................................................................................... 42
-2-
Publication Release Date: Aug. 13,2007
Revision A07
W9812G2GB
1. GENERAL DESCRIPTION
W9812G2GB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1,048,576 words
×
4 banks
×
32 bits. Using pipelined architecture and 0.11 µm process technology,
W9812G2GB delivers a data bandwidth of up to 166MHz words per second (-6). For different
application, W9812G2GB is sorted into two speed grades: -6/-6I and -75. The –6 is compliant to the
166MHz/CL3 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is
compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9812G2GB is ideal for main memory in
high performance applications.
2. FEATURES
•
3.3V
±
0.3V Power Supply
•
Up to 166 MHz Clock Frequency
•
1,048,576 Words
×
4 banks
×
32 bits organization
•
Self Refresh Mode
•
CAS Latency: 2 and 3
•
Burst Length: 1, 2, 4, 8 and full page
•
Burst Read, Single Writes Mode
•
Byte Data Controlled by DQM
•
Auto-precharge and Controlled Precharge
•
4K Refresh cycles / 64 mS
•
Interface: LVTTL
•
Packaged in TFBGA 90 Ball
•
W9812G2GB is using lead free materials with RoHS compliant
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED
MAXIMUM SELF
REFRESH CURRENT
OPERATING
TEMPERATURE
W9812G2GB-6
W9812G2GB-6I
W9812G2GB-75
166MHz/CL3
166MHz/CL3
133MHZ/CL3
2 mA
2 mA
2 mA
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
-3-
Publication Release Date:Aug. 13,2007
Revision A07
W9812G2GB
4. BALL CONFIGURATION
Top View
1
A
DQ26
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BS0
CAS#
VDD
DQ6
DQ1
VDDQ
VDD
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BS1
CS#
WE#
DQ7
DQ5
DQ3
VSSQ
DQ0
DQ21
DQ19
VDDQ
VDDQ
VSSQ
VDD
A1
A11
RAS#
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
2
3
4
5
6
7
8
9
B
DQ28
C
VSSQ
D
VSSQ
E
F
G
H
J
K
L
M
N
P
R
VDDQ
VSS
A4
A7
CLK
DQM1
VDDQ
VSSQ
VSSQ
DQ11
DQ13
-4-
Publication Release Date: Aug. 13,2007
Revision A07
W9812G2GB
5. PIN DESCRIPTION
BALL LOCATION PIN NAME
G1~G3,G7~G9,F2,F
A0−A11
3,H1,H2,J3,H9
FUNCTION
DESCRIPTION
Multiplexed pins for row and column address. Row
address: A0−A11. Column address: A0−A7. A10 is
sampled during a precharge command to determine if all
banks are to be precharged or bank selected by BS0,
BS1.
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
Address
J7,H8
BS0, BS1
Bank Select
A1,A2,A8,A9,B1,B9,
C2,C3,C7,C8,D2,D3,
Data Input/
D7,D8,E2,E8,L2,L8,
DQ0−DQ31
Output
M2,M3,M7,M8,N2,N3
,N7,N8,P1,P9,R1,R2,
R8,R9
J8
Multiplexed pins for data output and input.
CS
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and
previous operation continues.
Command input. When sampled at the rising edge of the
clock
RAS
,
CAS
and
WE
define the operation to be
executed.
J9
RAS
CAS
Row Address
Strobe
K7
K8
Column Address
Referred to
RAS
Strobe
Write Enable
Referred to
RAS
WE
DQM0~3
F2,F8,K1,K9
The output buffer is placed at Hi-Z (with latency of 2) when
DQM is sampled high in read cycle. In write cycle,
Input/output mask
sampling DQM high will block the write operation with zero
latency.
Clock Inputs
Clock Enable
Power (+3.3V)
Ground
System clock used to sample inputs on the rising edge of
clock.
CKE controls the clock activation and deactivation. When
CKE is low, Power Down mode, Suspend mode, or Self
Refresh mode is entered.
Power for input buffers and logic circuit inside DRAM.
Ground for input buffers and logic circuit inside DRAM.
J1
J2
A7,F9,L7,R7
A3,F1,L3,R3
CLK
CKE
VDD
VSS
B2,B7,C9,D9,E1,L1,
VDDQ
M9,N9,P2,
B8,B3,C1,D1,E9,L9,
VSSQ
M1,N1,P8,
E3,E7,H3,H7,H9,
K2,K3
NC
Power (+3.3V) for Separated power from VDD, to improve DQ noise
I/O buffer
immunity.
Ground for I/O
buffer
No Connection
Separated ground from VSS, to improve DQ noise
immunity.
No connection
-5-
Publication Release Date:Aug. 13,2007
Revision A07
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