KM416V4100BS-L6TQ datasheet, PDF

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KM416V4100BS-L6TQ: DescriptionFast Page DRAM, 4MX16, 60ns, CMOS, PDSO50; Categorystorage storage; File Size1MB，35 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM416V4100BS-L6TQ Overview

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50

KM416V4100BS-L6TQ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	TSOP, TSOP50,.46,32
Reach Compliance Code	unknown
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G50
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of terminals	50
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.0003 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Base Number Matches	1

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KM416V4100BS-L6TQ Related Products

	KM416V4100BS-L6TQ	KM416V4100BS-L6Q	KM416V4000BS-6C	KM416V4100BS-5K	KM416V4100BS-6C
Description	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50	Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32	TSOP, TSOP50,.46,32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	60 ns	60 ns	60 ns	50 ns	60 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50
JESD-609 code	e0	e0	e0	e0	e0
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM
memory width	16	16	16	16	16
Number of terminals	50	50	50	50	50
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	8192	4096	4096
self refresh	YES	YES	NO	NO	NO
Maximum standby current	0.0003 A	0.0003 A	0.0005 A	0.0005 A	0.0005 A
Maximum slew rate	0.11 mA	0.11 mA	0.08 mA	0.12 mA	0.11 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	-	-	SAMSUNG	SAMSUNG	SAMSUNG

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