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F1202

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerPolycore Rf Devices
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F1202 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

F1202 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Base Number Matches1

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Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Configuration Single Single Single Single Single Single Single Single Single Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum drain current (Abs) (ID) 4 A 2 A 8 A 4 A 8 A 0.8 A 1.6 A 3.2 A - 12 A
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C - 200 °C
Maker - - Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices Polycore Rf Devices
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