F3003 datasheet, PDF - EEWORLD Datasheet

F3003: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size105KB，1 Pages; ManufacturerPolyfet RF Devices; Websitehttp://www.polyfet.com/; Environmental Compliance

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F3003 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	10 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	180 W
surface mount	NO
Base Number Matches	1

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