SK50DM060D datasheet, PDF - EEWORLD Datasheet

SK50DM060D: DescriptionPower Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; CategoryDiscrete semiconductor The transistor; File Size180KB，4 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SK50DM060D Overview

Power Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	50 A
Configuration	COMPLEX
Minimum DC current gain (hFE)	100
Maximum landing time (tf)	3000 ns
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	620 W
Maximum power dissipation(Abs)	310 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	15000 ns
Maximum opening time (tons)	1500 ns
VCEsat-Max	2 V
Base Number Matches	1

	SK50DM060D	SK50DB060D
Description	Power Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin	Power Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	50 A	50 A
Configuration	COMPLEX	COMPLEX
Minimum DC current gain (hFE)	100	100
Maximum landing time (tf)	3000 ns	3000 ns
JESD-30 code	R-PUFM-X7	R-PUFM-X7
Number of components	2	2
Number of terminals	7	7
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	620 W	620 W
Maximum power dissipation(Abs)	310 W	310 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	15000 ns	15000 ns
Maximum opening time (tons)	1500 ns	1500 ns
VCEsat-Max	2 V	2 V

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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