TC6320
N- and P- Channel Enhancement-Mode Dual MOSFET
Features
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Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Freedom from secondary breakdown
Low input and output leakage
Independent, electrically isolated N- and P-
channels
General Description
The Supertex TC6320TG consists of a high voltage low
threshold N-channel and P-channel MOSFET in an SO-
8 package. Both MOSFETs have integrated gate-source
resistors and gate-source zener diode clamps which are
desired for high voltage pulser applications. The TC6320 is
a complementary high-speed, high voltage, gate-clamped
N- and P-channel MOSFET pair in a single SO-8 package.
The TC6320TG offers 200V breakdown voltage, 2.0A output
peak current and low input capacitance. The 2.0A output
current capability will minimize rise and fall times. The low
input capacitance will minimize propagation delay times
and also rise and fall times.The MOSFET has integrated
gate-source resistors and gate-source zener diode clamps
that are desired for high voltage pulser applications saving
board space and improving performance. It is specifically
designed for applications in medical ultrasound transmitters
and non-destructive evaluation in materials flaw detection,
but it can also be used as an efficient buffer.
Applications
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Medical ultrasound transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Ordering Information
Device
TC6320
Package Options
8-Lead SOIC (Narrow Body)
TC6320LG
TC6320LG-G
-G indicates package is RoHS compliant (‘Green’)
BV
DSS
/BV
DGS
N-Channel
200V
P-Channel
-200V
R
DS(ON)
(MAX)
N-Channel
7.0Ω
P-Channel
12Ω
Pin Configuration
S1
G1
Value
BV
DSS
BV
DGS
±20V
1
2
3
4
P-Channel
N-Channel
8
7
6
5
D1
D1
D2
D2
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
S2
G2
-55°C to +150°C
+300°C
SO-8 Package
(top view)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
TC6320
N- Channel Electrical Characteristics
(T =25°C unless otherwise specified)
J
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
R
GS
ΔR
GS
VZ
GS
ΔVZ
GS
I
DSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate-Source Shunt Resistor
Change in RGS with Temperature
Gate-Source Zener Voltage
Change in VZGS with Temperature
Zero gate voltage drain current
200
1.0
-
10
-
13.2
-
-
-
0.6
1.2
-
-
-
400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
-4.5
50
TBD
25
TBD
V
V
mV/
O
C
KΩ
%/
O
C
V
mV/
O
C
µA
mA
A
V
GS
= 0V, I
D
= 2mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
I
GS
= 100µA
I
GS
= 100µA
I
GS
= 2mA
I
GS
= 2mA
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
=150mA
V
DS
= 25V, I
D
= 200mA
V
GS
= 0V, V
DS
= 25V, f = 1MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
10.0
1.0
-
-
8.0
7.0
1.0
-
110
60
23
10
15
20
15
1.8
-
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-state drain current
Static drain-to-source ON-state resis-
tance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho
pF
ns
V
DD
=25V, I
D
= 1.0A,
R
GEN
= 25Ω
V
ns
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 0.5A
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
0V
V
DD
R
L
OUTPUT
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
TC6320
P- Channel Electrical Characteristics
(T =25°C unless otherwise specified)
J
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
R
GS
ΔR
GS
VZ
GS
ΔVZ
GS
I
DSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate-source shunt resistor
Change in R
GS
with temperature
Gate-source zener voltage
Change in RGS with temperature
Zero gate voltage drain current
-200
-1.0
-
10
-
13.2
-
-
-
-1.0
-2.0
-
-
-
400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-2.4
4.5
50
TBD
25
TBD
-10
-1.0
-
-
10
8.0
1.0
-
200
55
30
10
15
20
15
-1.8
-
V
V
mV/
O
C
KΩ
%/
O
C
V
mV/
O
C
µA
mA
A
V
GS
= 0V, I
D
= -2µA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
I
GS
= 100µA
I
GS
= 100µA
I
GS
= -2mA
I
GS
= -2mA
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -1.0mA
V
GS
= -10V, I
D
=-200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V, V
DS
= -25V, f = 1MHz
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-state drain current
Static drain-to-source ON-state resis-
tance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho
pF
ns
V
DD
= -25V, I
D
= -1.0A,
R
GEN
= 25Ω
V
ns
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
P- Channel Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
V
DD
PULSE
GENERATOR
R
GEN
R
L
OUTPUT
t
(ON)
90%
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
INPUT
D.U.T.
10%
3
TC6320
8-Lead SO (LG) Package Outline
4.90 ± 0.10
8
6.00 ± 0.20
3.90 ± 0.10
Note 2
1
Top View
0.17 - 0.25
1.75 MAX
1.25 MIN
5° - 15°
(4 PLCS)
45°
0.25 - 0.50
Note 2
0° - 8°
0.10 - 0.25
1.27BSC
0.40 - 1.27
0.31 - 0.51
Side View
Notes:
1. All dimensions in millimeters. Angles in degrees.
2. If the corner is not chamfered, then a Pin 1 identifier
must be located within the area indicated.
End View
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Doc.# DSFP-TC6320
C112106
4
51mcu
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